JPH02116750U - - Google Patents
Info
- Publication number
- JPH02116750U JPH02116750U JP2504890U JP2504890U JPH02116750U JP H02116750 U JPH02116750 U JP H02116750U JP 2504890 U JP2504890 U JP 2504890U JP 2504890 U JP2504890 U JP 2504890U JP H02116750 U JPH02116750 U JP H02116750U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thickness
- auge
- semiconductor device
- compound semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 4
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Description
第１図は本考案の実施例の断面図、第２図はオ
ーミツク処理温度に対するオーミツク接触抵抗率
を示す図、第３図は２５０℃でエージングを行い
、オーミツク接触抵抗率の時間的変化を示した図
、第４図及び第５図は、Ａｕ膜の表面モホロジー
を示すもので光学顕微鏡写真を模写した図である
。
１……半絶縁性ＧａＡｓ基板、２……ｎ形Ｇａ
Ａｓ層、３……ＡｕＧｅ層、４……Ｎｉ層、５…
…Ａｕ層。
Fig. 1 is a cross-sectional view of an embodiment of the present invention, Fig. 2 is a diagram showing the ohmic contact resistivity versus ohmic processing temperature, and Fig. 3 is a diagram showing the temporal change in the ohmic contact resistivity after aging at 250°C. Figures 4 and 5 show the surface morphology of the Au film and are copies of optical micrographs. 1...Semi-insulating GaAs substrate, 2...n-type Ga
As layer, 3...AuGe layer, 4...Ni layer, 5...
...Au layer.
Claims (1)
ｉ層、Ａｕ層が順次蒸着された３層構造のオーミ
ツク電極が形成され、前記ｎ形ＧａＡｓ層と前記
ＡｕＧｅ層との間に熱処理によりオーミツク接触
が形成された化合物半導体装置において、 前記ＡｕＧｅ層はＧｅの含有量が１２ｗｔ％で
あり、厚さが１００Åから３５０Åの範囲である
ことを特徴とする化合物半導体装置。 (2) 前記ＡｕＧｅ層の厚さが３００Åであるこ
とを特徴とする請求項１記載の化合物半導体装置
。 (3) 前記ＡｕＧｅ層の厚さが３００Å、前記Ｎ
ｉ層の厚さが３００Å、前記Ａｕ層の厚さが１０
０Åであることを特徴とする請求項１記載の化合
物半導体装置。[Claims for Utility Model Registration] (1) On the surface of the n-type GaAs layer, an AuGe layer, an N
In a compound semiconductor device in which a three-layer ohmic electrode is formed in which an i-layer and an Au layer are sequentially deposited, and an ohmic contact is formed between the n-type GaAs layer and the AuGe layer by heat treatment, the AuGe layer is A compound semiconductor device having a Ge content of 12 wt% and a thickness ranging from 100 Å to 350 Å. (2) The compound semiconductor device according to claim 1, wherein the AuGe layer has a thickness of 300 Å. (3) The thickness of the AuGe layer is 300 Å, and the thickness of the N
The thickness of the i layer is 300 Å, and the thickness of the Au layer is 10 Å.
2. The compound semiconductor device according to claim 1, wherein the thickness is 0 Å.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2504890U JPH02116750U (en) | 1990-03-15 | 1990-03-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2504890U JPH02116750U (en) | 1990-03-15 | 1990-03-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02116750U true JPH02116750U (en) | 1990-09-19 |
Family
ID=31245434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2504890U Pending JPH02116750U (en) | 1990-03-15 | 1990-03-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02116750U (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5720432A (en) * | 1980-07-14 | 1982-02-02 | Toshiba Corp | Formation of ohmic electrode |
| JPS5723222A (en) * | 1980-07-17 | 1982-02-06 | Matsushita Electric Ind Co Ltd | Formation of semiconductor element electrode |
| JPS57106087A (en) * | 1980-11-03 | 1982-07-01 | Siemens Ag | Light reflective ohmic contact and method of producing same |
| JPS58100455A (en) * | 1981-12-09 | 1983-06-15 | Matsushita Electric Ind Co Ltd | Ohmic electrode for chemical semiconductor and manufacture thereof |
-
1990
- 1990-03-15 JP JP2504890U patent/JPH02116750U/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5720432A (en) * | 1980-07-14 | 1982-02-02 | Toshiba Corp | Formation of ohmic electrode |
| JPS5723222A (en) * | 1980-07-17 | 1982-02-06 | Matsushita Electric Ind Co Ltd | Formation of semiconductor element electrode |
| JPS57106087A (en) * | 1980-11-03 | 1982-07-01 | Siemens Ag | Light reflective ohmic contact and method of producing same |
| JPS58100455A (en) * | 1981-12-09 | 1983-06-15 | Matsushita Electric Ind Co Ltd | Ohmic electrode for chemical semiconductor and manufacture thereof |
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