JPS54107670A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54107670A
JPS54107670A JP1448778A JP1448778A JPS54107670A JP S54107670 A JPS54107670 A JP S54107670A JP 1448778 A JP1448778 A JP 1448778A JP 1448778 A JP1448778 A JP 1448778A JP S54107670 A JPS54107670 A JP S54107670A
Authority
JP
Japan
Prior art keywords
layer
gaas
constitution
providing
temperature rise
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1448778A
Other languages
Japanese (ja)
Inventor
Kazuo Nishitani
Hiroshi Sawano
Takashi Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1448778A priority Critical patent/JPS54107670A/en
Publication of JPS54107670A publication Critical patent/JPS54107670A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To manufacture stable device against temperature rise, by providing Au layer on Pt layer on GaAs via Mo and by avoiding the deterioration in Schottky barrier.
CONSTITUTION: By providing Mo layer 7 between Pt layer 3 and Au layer 5, the external diffusion of Ga and As in the GaAs operation region and the internal diffusion of Au layer are prevented, and mutual interferrence of the layers 5,3,2 are limited. With this constitution, the Pt Schottky barrier type GaAs impad diode can be obtained, which is stable to the temperature rise.
COPYRIGHT: (C)1979,JPO&Japio
JP1448778A 1978-02-10 1978-02-10 Semiconductor device Pending JPS54107670A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1448778A JPS54107670A (en) 1978-02-10 1978-02-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1448778A JPS54107670A (en) 1978-02-10 1978-02-10 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS54107670A true JPS54107670A (en) 1979-08-23

Family

ID=11862398

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1448778A Pending JPS54107670A (en) 1978-02-10 1978-02-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54107670A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0567772A (en) * 1991-09-09 1993-03-19 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0567772A (en) * 1991-09-09 1993-03-19 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

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