JPS5710936A - Forming method for contact hole - Google Patents
Forming method for contact holeInfo
- Publication number
- JPS5710936A JPS5710936A JP8687680A JP8687680A JPS5710936A JP S5710936 A JPS5710936 A JP S5710936A JP 8687680 A JP8687680 A JP 8687680A JP 8687680 A JP8687680 A JP 8687680A JP S5710936 A JPS5710936 A JP S5710936A
- Authority
- JP
- Japan
- Prior art keywords
- etched
- film
- films
- centering
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 4
- 238000005530 etching Methods 0.000 abstract 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 238000006243 chemical reaction Methods 0.000 abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 238000001020 plasma etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8687680A JPS5710936A (en) | 1980-06-25 | 1980-06-25 | Forming method for contact hole |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8687680A JPS5710936A (en) | 1980-06-25 | 1980-06-25 | Forming method for contact hole |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5710936A true JPS5710936A (en) | 1982-01-20 |
Family
ID=13899026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8687680A Pending JPS5710936A (en) | 1980-06-25 | 1980-06-25 | Forming method for contact hole |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5710936A (ja) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58147122A (ja) * | 1982-02-26 | 1983-09-01 | Fujitsu Ltd | 化合物半導体装置の製造方法 |
| JPS5931028A (ja) * | 1982-08-13 | 1984-02-18 | Sharp Corp | 半導体装置の製造方法 |
| JPS607737A (ja) * | 1983-06-27 | 1985-01-16 | Nec Corp | 半導体装置の製造方法 |
| JPH06509171A (ja) * | 1991-07-22 | 1994-10-13 | アクティエボラゲット ボルボ | 帯状可撓要素の所定張力を指示するための装置 |
| CN103489757A (zh) * | 2013-10-16 | 2014-01-01 | 信利半导体有限公司 | 一种用于叠层绝缘薄膜的刻蚀方法 |
-
1980
- 1980-06-25 JP JP8687680A patent/JPS5710936A/ja active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58147122A (ja) * | 1982-02-26 | 1983-09-01 | Fujitsu Ltd | 化合物半導体装置の製造方法 |
| JPH0354461B2 (ja) * | 1982-02-26 | 1991-08-20 | ||
| JPS5931028A (ja) * | 1982-08-13 | 1984-02-18 | Sharp Corp | 半導体装置の製造方法 |
| JPH0138370B2 (ja) * | 1982-08-13 | 1989-08-14 | Sharp Kk | |
| JPS607737A (ja) * | 1983-06-27 | 1985-01-16 | Nec Corp | 半導体装置の製造方法 |
| JPH06509171A (ja) * | 1991-07-22 | 1994-10-13 | アクティエボラゲット ボルボ | 帯状可撓要素の所定張力を指示するための装置 |
| JP3151218B2 (ja) * | 1991-07-22 | 2001-04-03 | アクティエボラゲット ボルボ | 帯状可撓要素の所定張力を指示するための装置 |
| CN103489757A (zh) * | 2013-10-16 | 2014-01-01 | 信利半导体有限公司 | 一种用于叠层绝缘薄膜的刻蚀方法 |
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