JPS57102081A - Manufacture of luminous element - Google Patents

Manufacture of luminous element

Info

Publication number
JPS57102081A
JPS57102081A JP17947180A JP17947180A JPS57102081A JP S57102081 A JPS57102081 A JP S57102081A JP 17947180 A JP17947180 A JP 17947180A JP 17947180 A JP17947180 A JP 17947180A JP S57102081 A JPS57102081 A JP S57102081A
Authority
JP
Japan
Prior art keywords
regist
pit
electrode
gan layer
negative
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17947180A
Other languages
English (en)
Other versions
JPS6134277B2 (ja
Inventor
Yoshimasa Oki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP17947180A priority Critical patent/JPS57102081A/ja
Publication of JPS57102081A publication Critical patent/JPS57102081A/ja
Publication of JPS6134277B2 publication Critical patent/JPS6134277B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
JP17947180A 1980-12-17 1980-12-17 Manufacture of luminous element Granted JPS57102081A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17947180A JPS57102081A (en) 1980-12-17 1980-12-17 Manufacture of luminous element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17947180A JPS57102081A (en) 1980-12-17 1980-12-17 Manufacture of luminous element

Publications (2)

Publication Number Publication Date
JPS57102081A true JPS57102081A (en) 1982-06-24
JPS6134277B2 JPS6134277B2 (ja) 1986-08-06

Family

ID=16066419

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17947180A Granted JPS57102081A (en) 1980-12-17 1980-12-17 Manufacture of luminous element

Country Status (1)

Country Link
JP (1) JPS57102081A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0277597A2 (en) * 1987-01-31 1988-08-10 Toyoda Gosei Co., Ltd. Gallium nitride group semiconductor light emitting diode and the process of producing the same
JPS6461968A (en) * 1987-09-02 1989-03-08 Kyocera Corp Light-emitting element
US5218216A (en) * 1987-01-31 1993-06-08 Toyoda Gosei Co., Ltd. Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same
JPH10200215A (ja) * 1997-01-08 1998-07-31 Mitsubishi Cable Ind Ltd 半導体発光素子及びその製造方法
JP2006339534A (ja) * 2005-06-03 2006-12-14 Sony Corp 発光ダイオード、発光ダイオードの製造方法、発光ダイオードバックライト、発光ダイオード照明装置、発光ダイオードディスプレイおよび電子機器

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0536458Y2 (ja) * 1986-02-03 1993-09-14
JPH0533180Y2 (ja) * 1986-12-27 1993-08-24
JPH0520390Y2 (ja) * 1987-09-09 1993-05-27
JPH0529579U (ja) * 1991-09-30 1993-04-20 奥村遊機株式會社 パチンコ機

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0277597A2 (en) * 1987-01-31 1988-08-10 Toyoda Gosei Co., Ltd. Gallium nitride group semiconductor light emitting diode and the process of producing the same
US5218216A (en) * 1987-01-31 1993-06-08 Toyoda Gosei Co., Ltd. Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same
JPS6461968A (en) * 1987-09-02 1989-03-08 Kyocera Corp Light-emitting element
JPH10200215A (ja) * 1997-01-08 1998-07-31 Mitsubishi Cable Ind Ltd 半導体発光素子及びその製造方法
JP2006339534A (ja) * 2005-06-03 2006-12-14 Sony Corp 発光ダイオード、発光ダイオードの製造方法、発光ダイオードバックライト、発光ダイオード照明装置、発光ダイオードディスプレイおよび電子機器

Also Published As

Publication number Publication date
JPS6134277B2 (ja) 1986-08-06

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