JPS5718377A - Light emitting element - Google Patents

Light emitting element

Info

Publication number
JPS5718377A
JPS5718377A JP9364480A JP9364480A JPS5718377A JP S5718377 A JPS5718377 A JP S5718377A JP 9364480 A JP9364480 A JP 9364480A JP 9364480 A JP9364480 A JP 9364480A JP S5718377 A JPS5718377 A JP S5718377A
Authority
JP
Japan
Prior art keywords
light emitting
defect
semiinsulating
film
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9364480A
Other languages
Japanese (ja)
Other versions
JPS6138877B2 (en
Inventor
Atsuyuki Kobayashi
Yukio Toyoda
Yoshimasa Oki
Masafumi Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9364480A priority Critical patent/JPS5718377A/en
Publication of JPS5718377A publication Critical patent/JPS5718377A/en
Publication of JPS6138877B2 publication Critical patent/JPS6138877B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To form a light emitting element which can normally operate even in a chip in which conductive defect exists by covering the conductive defect existing on a nitrided gallium semiinsulating light emitting layer with an insulating layer film different from nitrided gallium. CONSTITUTION:A light emitting element having a nitrided gallium semiinsulating lignt emitting layer 3 has a transparent substrate 1, a conductive GaN layer 2, a semiinsulating GaN light emitting layer 3, a positive electrode 4 and pair electrodes (not shown). When a defect 6 is observed after a semiinsulating GaN light emitting layer 3 is formed, one end of GaN layer 2 and facing electrodes are energized therebetween to plate copper to cover copper plating 7 on the defect 6, the defect 6 is then heat treated to form an insulating film 71. An insulating film may be formed by an anodic oxidation method instead of the method of forming the film 71. After the film 71 is formed, a positive electrode 4 is formed.
JP9364480A 1980-07-08 1980-07-08 Light emitting element Granted JPS5718377A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9364480A JPS5718377A (en) 1980-07-08 1980-07-08 Light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9364480A JPS5718377A (en) 1980-07-08 1980-07-08 Light emitting element

Publications (2)

Publication Number Publication Date
JPS5718377A true JPS5718377A (en) 1982-01-30
JPS6138877B2 JPS6138877B2 (en) 1986-09-01

Family

ID=14088068

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9364480A Granted JPS5718377A (en) 1980-07-08 1980-07-08 Light emitting element

Country Status (1)

Country Link
JP (1) JPS5718377A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0155125A2 (en) * 1984-03-05 1985-09-18 Energy Conversion Devices, Inc. Level substrate for semiconducting devices and method for fabricating same
US5278433A (en) * 1990-02-28 1994-01-11 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer
US5733796A (en) * 1990-02-28 1998-03-31 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US6362017B1 (en) 1990-02-28 2002-03-26 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US6830992B1 (en) 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0155125A2 (en) * 1984-03-05 1985-09-18 Energy Conversion Devices, Inc. Level substrate for semiconducting devices and method for fabricating same
US5278433A (en) * 1990-02-28 1994-01-11 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer
US5733796A (en) * 1990-02-28 1998-03-31 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US6362017B1 (en) 1990-02-28 2002-03-26 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US6472689B1 (en) 1990-02-28 2002-10-29 Toyoda Gosei Co., Ltd. Light emitting device
US6472690B1 (en) 1990-02-28 2002-10-29 Toyoda Gosei Co., Ltd. Gallium nitride group compound semiconductor
US6593599B1 (en) 1990-02-28 2003-07-15 Japan Science And Technology Corporation Light-emitting semiconductor device using gallium nitride group compound
US6607595B1 (en) 1990-02-28 2003-08-19 Toyoda Gosei Co., Ltd. Method for producing a light-emitting semiconductor device
US6830992B1 (en) 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
US6984536B2 (en) 1990-02-28 2006-01-10 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor

Also Published As

Publication number Publication date
JPS6138877B2 (en) 1986-09-01

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