JPS5690559A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5690559A JPS5690559A JP16722279A JP16722279A JPS5690559A JP S5690559 A JPS5690559 A JP S5690559A JP 16722279 A JP16722279 A JP 16722279A JP 16722279 A JP16722279 A JP 16722279A JP S5690559 A JPS5690559 A JP S5690559A
- Authority
- JP
- Japan
- Prior art keywords
- si3n4
- poly
- cross
- under
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 101100192139 Homo sapiens PSG6 gene Proteins 0.000 abstract 1
- 102100022026 Pregnancy-specific beta-1-glycoprotein 6 Human genes 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16722279A JPS5690559A (en) | 1979-12-22 | 1979-12-22 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16722279A JPS5690559A (en) | 1979-12-22 | 1979-12-22 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5690559A true JPS5690559A (en) | 1981-07-22 |
Family
ID=15845698
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16722279A Pending JPS5690559A (en) | 1979-12-22 | 1979-12-22 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5690559A (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5219081A (en) * | 1975-08-05 | 1977-01-14 | Fujitsu Ltd | Production method of semiconductor device |
JPS52119192A (en) * | 1976-03-31 | 1977-10-06 | Nec Corp | Semiconductor |
JPS5380174A (en) * | 1976-12-25 | 1978-07-15 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS54154271A (en) * | 1978-05-25 | 1979-12-05 | Nec Corp | Manufacture of semiconductor device |
JPS5721863A (en) * | 1980-07-15 | 1982-02-04 | Sanyo Electric Co Ltd | Manufacture of charge coupled element |
-
1979
- 1979-12-22 JP JP16722279A patent/JPS5690559A/ja active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5219081A (en) * | 1975-08-05 | 1977-01-14 | Fujitsu Ltd | Production method of semiconductor device |
JPS52119192A (en) * | 1976-03-31 | 1977-10-06 | Nec Corp | Semiconductor |
JPS5380174A (en) * | 1976-12-25 | 1978-07-15 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS54154271A (en) * | 1978-05-25 | 1979-12-05 | Nec Corp | Manufacture of semiconductor device |
JPS5721863A (en) * | 1980-07-15 | 1982-02-04 | Sanyo Electric Co Ltd | Manufacture of charge coupled element |
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