JPS56144578A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS56144578A JPS56144578A JP4734880A JP4734880A JPS56144578A JP S56144578 A JPS56144578 A JP S56144578A JP 4734880 A JP4734880 A JP 4734880A JP 4734880 A JP4734880 A JP 4734880A JP S56144578 A JPS56144578 A JP S56144578A
- Authority
- JP
- Japan
- Prior art keywords
- window
- mask
- formation
- sbd
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 230000015572 biosynthetic process Effects 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000010276 construction Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain a highly integrated device with an SBD by stacking a poly Si film on an oxide film selectively provided at a window for the formation of a Shottkey barrier diode after etched in an oxide film on an Si substrate. CONSTITUTION:A base layer 12 is provided on an Si substrate 11 and with a resist mask 14 applied, a window is etched in SiO2 13. After the mask 14 is removed and Si3N4 17 is coated, a resist mask 15 is applied to expose only a window 13S for formation of a Shottkey barrier diode (SBD). The Si substrate is exposed to the window 13S by etching. After the mask is removed, selective oxidation is made with an Si3N4 mask 17 to form SiO2 16 in the window. Thereafter, a series of normal processes are conducted to complete the device. This can prevent the formation of a poly Si in the SBD forming region without use of a double construction resist film. Therefore, the use of a positive resist enables the formation of a finer pattern than the use of a negative one thereby improving the integration level of the device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4734880A JPS56144578A (en) | 1980-04-10 | 1980-04-10 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4734880A JPS56144578A (en) | 1980-04-10 | 1980-04-10 | Production of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56144578A true JPS56144578A (en) | 1981-11-10 |
| JPH025299B2 JPH025299B2 (en) | 1990-02-01 |
Family
ID=12772638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4734880A Granted JPS56144578A (en) | 1980-04-10 | 1980-04-10 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56144578A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5272586A (en) * | 1975-12-15 | 1977-06-17 | Fujitsu Ltd | Production of semiconductor device |
| JPS5547349A (en) * | 1978-09-28 | 1980-04-03 | Hitachi Metals Ltd | Magnetic alloy for dental surgery |
-
1980
- 1980-04-10 JP JP4734880A patent/JPS56144578A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5272586A (en) * | 1975-12-15 | 1977-06-17 | Fujitsu Ltd | Production of semiconductor device |
| JPS5547349A (en) * | 1978-09-28 | 1980-04-03 | Hitachi Metals Ltd | Magnetic alloy for dental surgery |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH025299B2 (en) | 1990-02-01 |
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