JPS5476068A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5476068A
JPS5476068A JP14359277A JP14359277A JPS5476068A JP S5476068 A JPS5476068 A JP S5476068A JP 14359277 A JP14359277 A JP 14359277A JP 14359277 A JP14359277 A JP 14359277A JP S5476068 A JPS5476068 A JP S5476068A
Authority
JP
Japan
Prior art keywords
gate
mask
window
film
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14359277A
Other languages
Japanese (ja)
Inventor
Kazunori Imaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14359277A priority Critical patent/JPS5476068A/en
Publication of JPS5476068A publication Critical patent/JPS5476068A/en
Pending legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To secure a high density for the device by forming the electrode window by means of the heat oxide film on the poly Si gate and installing the window near the gate or with partial overlap to the gate.
CONSTITUTION: Poly Si 13 is laminated on gate oxide film 12G of Si substrate 11; polyimide resin 14 mask is used for etching; and thus gate G and wiring E are formed. Then Si3N315 is coated to lift off the mask, and then SiO216 is formed after oxidation. Part of film 16 is etched selectively to remove film 15. The window is drilled with no use of the mask and by making use of the difference between thick oxide film 13G and 13E and thin oxide film 12G to form oxide thin film 17. The source diffusion window is provided through the coarse positioning of the resist mask; the drain diffusion window is drilled via the difference of the film thickness again and with use the resist mask; and poly Si electrode 19S and capacity electrode 19C are formed selectively. The diffusion treatment is given with coat of PSG20 to form source 21S and drain 21D and then Al wiring 22 respectively. In such way, the mask margin is eliminated through the self-matching, thus realizing a small size and a large amount of capacity for the device.
COPYRIGHT: (C)1979,JPO&Japio
JP14359277A 1977-11-30 1977-11-30 Manufacture of semiconductor device Pending JPS5476068A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14359277A JPS5476068A (en) 1977-11-30 1977-11-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14359277A JPS5476068A (en) 1977-11-30 1977-11-30 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5476068A true JPS5476068A (en) 1979-06-18

Family

ID=15342299

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14359277A Pending JPS5476068A (en) 1977-11-30 1977-11-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5476068A (en)

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