JPS5688362A - Vertical type power mos transistor - Google Patents

Vertical type power mos transistor

Info

Publication number
JPS5688362A
JPS5688362A JP16538379A JP16538379A JPS5688362A JP S5688362 A JPS5688362 A JP S5688362A JP 16538379 A JP16538379 A JP 16538379A JP 16538379 A JP16538379 A JP 16538379A JP S5688362 A JPS5688362 A JP S5688362A
Authority
JP
Japan
Prior art keywords
source
type
regions
gate
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16538379A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6313352B2 (US20020051482A1-20020502-M00020.png
Inventor
Akio Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16538379A priority Critical patent/JPS5688362A/ja
Publication of JPS5688362A publication Critical patent/JPS5688362A/ja
Publication of JPS6313352B2 publication Critical patent/JPS6313352B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
JP16538379A 1979-12-19 1979-12-19 Vertical type power mos transistor Granted JPS5688362A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16538379A JPS5688362A (en) 1979-12-19 1979-12-19 Vertical type power mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16538379A JPS5688362A (en) 1979-12-19 1979-12-19 Vertical type power mos transistor

Publications (2)

Publication Number Publication Date
JPS5688362A true JPS5688362A (en) 1981-07-17
JPS6313352B2 JPS6313352B2 (US20020051482A1-20020502-M00020.png) 1988-03-25

Family

ID=15811336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16538379A Granted JPS5688362A (en) 1979-12-19 1979-12-19 Vertical type power mos transistor

Country Status (1)

Country Link
JP (1) JPS5688362A (US20020051482A1-20020502-M00020.png)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2572220A1 (fr) * 1984-10-23 1986-04-25 Rca Corp Dispositif semi-conducteur a effet de champ
US4801986A (en) * 1987-04-03 1989-01-31 General Electric Company Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method
FR2640081A1 (fr) * 1988-12-06 1990-06-08 Fuji Electric Co Ltd Transistor a effet de champ vertical
EP0587176A2 (en) * 1992-09-10 1994-03-16 Kabushiki Kaisha Toshiba Gate wiring of DMOSFET

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2572220A1 (fr) * 1984-10-23 1986-04-25 Rca Corp Dispositif semi-conducteur a effet de champ
US4801986A (en) * 1987-04-03 1989-01-31 General Electric Company Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method
FR2640081A1 (fr) * 1988-12-06 1990-06-08 Fuji Electric Co Ltd Transistor a effet de champ vertical
EP0587176A2 (en) * 1992-09-10 1994-03-16 Kabushiki Kaisha Toshiba Gate wiring of DMOSFET
EP0587176A3 (US20020051482A1-20020502-M00020.png) * 1992-09-10 1994-04-20 Toshiba Kk
US5420450A (en) * 1992-09-10 1995-05-30 Kabushiki Kaisha Toshiba Semiconductor device having stable breakdown voltage in wiring area

Also Published As

Publication number Publication date
JPS6313352B2 (US20020051482A1-20020502-M00020.png) 1988-03-25

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