JPS5687359A - Manufacture of one transistor type memory cell - Google Patents

Manufacture of one transistor type memory cell

Info

Publication number
JPS5687359A
JPS5687359A JP16501479A JP16501479A JPS5687359A JP S5687359 A JPS5687359 A JP S5687359A JP 16501479 A JP16501479 A JP 16501479A JP 16501479 A JP16501479 A JP 16501479A JP S5687359 A JPS5687359 A JP S5687359A
Authority
JP
Japan
Prior art keywords
memory cell
film
edge
manufacture
buried
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16501479A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6325713B2 (US20090163788A1-20090625-C00002.png
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16501479A priority Critical patent/JPS5687359A/ja
Publication of JPS5687359A publication Critical patent/JPS5687359A/ja
Publication of JPS6325713B2 publication Critical patent/JPS6325713B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP16501479A 1979-12-19 1979-12-19 Manufacture of one transistor type memory cell Granted JPS5687359A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16501479A JPS5687359A (en) 1979-12-19 1979-12-19 Manufacture of one transistor type memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16501479A JPS5687359A (en) 1979-12-19 1979-12-19 Manufacture of one transistor type memory cell

Publications (2)

Publication Number Publication Date
JPS5687359A true JPS5687359A (en) 1981-07-15
JPS6325713B2 JPS6325713B2 (US20090163788A1-20090625-C00002.png) 1988-05-26

Family

ID=15804193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16501479A Granted JPS5687359A (en) 1979-12-19 1979-12-19 Manufacture of one transistor type memory cell

Country Status (1)

Country Link
JP (1) JPS5687359A (US20090163788A1-20090625-C00002.png)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0090161A2 (de) * 1982-02-18 1983-10-05 Siemens Aktiengesellschaft Verfahren zum Herstellen von dynamischen Halbleiter-Speicherzellen mit wahlfreiem Zugriff (RAM) nach der Doppel-Polysilizium-Gate-Technologie
JPS59129461A (ja) * 1983-01-13 1984-07-25 Fujitsu Ltd 半導体装置とその製造方法
JPH01292851A (ja) * 1988-05-20 1989-11-27 Nec Corp 半導体記憶装置
US4987093A (en) * 1987-04-15 1991-01-22 Texas Instruments Incorporated Through-field implant isolated devices and method
US5034335A (en) * 1987-05-26 1991-07-23 U.S. Philips Corp. Method of manufacturing a silicon on insulator (SOI) semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0399139U (US20090163788A1-20090625-C00002.png) * 1990-01-29 1991-10-16

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0090161A2 (de) * 1982-02-18 1983-10-05 Siemens Aktiengesellschaft Verfahren zum Herstellen von dynamischen Halbleiter-Speicherzellen mit wahlfreiem Zugriff (RAM) nach der Doppel-Polysilizium-Gate-Technologie
JPS59129461A (ja) * 1983-01-13 1984-07-25 Fujitsu Ltd 半導体装置とその製造方法
JPH0480540B2 (US20090163788A1-20090625-C00002.png) * 1983-01-13 1992-12-18 Fujitsu Ltd
US4987093A (en) * 1987-04-15 1991-01-22 Texas Instruments Incorporated Through-field implant isolated devices and method
US5034335A (en) * 1987-05-26 1991-07-23 U.S. Philips Corp. Method of manufacturing a silicon on insulator (SOI) semiconductor device
JPH01292851A (ja) * 1988-05-20 1989-11-27 Nec Corp 半導体記憶装置

Also Published As

Publication number Publication date
JPS6325713B2 (US20090163788A1-20090625-C00002.png) 1988-05-26

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