JPS5753981A - Handotaisochinoseizohoho - Google Patents

Handotaisochinoseizohoho

Info

Publication number
JPS5753981A
JPS5753981A JP12795280A JP12795280A JPS5753981A JP S5753981 A JPS5753981 A JP S5753981A JP 12795280 A JP12795280 A JP 12795280A JP 12795280 A JP12795280 A JP 12795280A JP S5753981 A JPS5753981 A JP S5753981A
Authority
JP
Japan
Prior art keywords
oxide film
mask
electrode
gate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12795280A
Other languages
English (en)
Inventor
Akira Kurosawa
Takanari Tsujimaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12795280A priority Critical patent/JPS5753981A/ja
Publication of JPS5753981A publication Critical patent/JPS5753981A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP12795280A 1980-09-17 1980-09-17 Handotaisochinoseizohoho Pending JPS5753981A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12795280A JPS5753981A (ja) 1980-09-17 1980-09-17 Handotaisochinoseizohoho

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12795280A JPS5753981A (ja) 1980-09-17 1980-09-17 Handotaisochinoseizohoho

Publications (1)

Publication Number Publication Date
JPS5753981A true JPS5753981A (ja) 1982-03-31

Family

ID=14972693

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12795280A Pending JPS5753981A (ja) 1980-09-17 1980-09-17 Handotaisochinoseizohoho

Country Status (1)

Country Link
JP (1) JPS5753981A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02280322A (ja) * 1989-04-21 1990-11-16 Sony Corp 半導体装置の製法
JP2008153346A (ja) * 2006-12-15 2008-07-03 Seiko Instruments Inc 半導体装置およびその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02280322A (ja) * 1989-04-21 1990-11-16 Sony Corp 半導体装置の製法
JP2008153346A (ja) * 2006-12-15 2008-07-03 Seiko Instruments Inc 半導体装置およびその製造方法

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