JPS5683955A - Manufacturing of semiconductor - Google Patents

Manufacturing of semiconductor

Info

Publication number
JPS5683955A
JPS5683955A JP16196479A JP16196479A JPS5683955A JP S5683955 A JPS5683955 A JP S5683955A JP 16196479 A JP16196479 A JP 16196479A JP 16196479 A JP16196479 A JP 16196479A JP S5683955 A JPS5683955 A JP S5683955A
Authority
JP
Japan
Prior art keywords
wiring
base plate
pattern
thin film
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16196479A
Other languages
Japanese (ja)
Other versions
JPH0147011B2 (en
Inventor
Kenji Okada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16196479A priority Critical patent/JPS5683955A/en
Publication of JPS5683955A publication Critical patent/JPS5683955A/en
Publication of JPH0147011B2 publication Critical patent/JPH0147011B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To provide a wiring having a good material quality by a method wherein a similar monitor pattern is arranged around the circumference of the base plate when a polycrystal silicon thin film layer wiring having a metalic silicide layer is formed on a required impurity dispersion layer and an internal region of the semiconductor base plate. CONSTITUTION:Polycrystal silicon thin wiring having a desired pattern metalic silicide layer is formed on the internal region 7 in the semiconductor base plate in which a required impurity dispersion layer and insulation film are formed. At this time, thin film wiring having the similar material is applied at the proper position in the circumference of the base plate and a monitor pattern as well as a pattern 1 extending from the pad 4 and the pad 3 are formed. With this arrangement, two probe check and curve tracer are used to measure a resistance value of the monitor patterns 1 and 2, a material quality of the thin film wiring used is controlled to improve a performance of the device.
JP16196479A 1979-12-13 1979-12-13 Manufacturing of semiconductor Granted JPS5683955A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16196479A JPS5683955A (en) 1979-12-13 1979-12-13 Manufacturing of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16196479A JPS5683955A (en) 1979-12-13 1979-12-13 Manufacturing of semiconductor

Publications (2)

Publication Number Publication Date
JPS5683955A true JPS5683955A (en) 1981-07-08
JPH0147011B2 JPH0147011B2 (en) 1989-10-12

Family

ID=15745410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16196479A Granted JPS5683955A (en) 1979-12-13 1979-12-13 Manufacturing of semiconductor

Country Status (1)

Country Link
JP (1) JPS5683955A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6034077A (en) * 1983-08-04 1985-02-21 Matsushita Electric Ind Co Ltd Solar cell element and manufacture thereof
JPS60177640A (en) * 1984-02-24 1985-09-11 Hitachi Ltd Semiconductor integrated circuit device
JPS61219154A (en) * 1985-03-25 1986-09-29 Nec Corp Semiconductor device
JPS6319833A (en) * 1986-07-14 1988-01-27 Agency Of Ind Science & Technol Method for testing semiconductor integrated circuit
JPH01125875A (en) * 1988-10-19 1989-05-18 Matsushita Electric Ind Co Ltd Solar cell element
JPH0851135A (en) * 1995-06-26 1996-02-20 Seiko Epson Corp Wafer and verifying method therefor
US5903489A (en) * 1997-09-19 1999-05-11 Nec Corporation Semiconductor memory device having a monitoring pattern
JP2002286780A (en) * 2001-03-23 2002-10-03 Nippon Sheet Glass Co Ltd Inspection method of metal wiring and structure of semiconductor device suitable for inspection
US7253436B2 (en) 2003-07-25 2007-08-07 Matsushita Electric Industrial Co., Ltd. Resistance defect assessment device, resistance defect assessment method, and method for manufacturing resistance defect assessment device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52139383A (en) * 1976-05-17 1977-11-21 Hitachi Ltd Testing method for semiconductor device
JPS52155066A (en) * 1976-06-18 1977-12-23 Mitsubishi Electric Corp Screening method of thin metal film wirings of semiconductor device
JPS53124091A (en) * 1977-04-05 1978-10-30 Nec Corp Solid state electron device and its manufacture

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52139383A (en) * 1976-05-17 1977-11-21 Hitachi Ltd Testing method for semiconductor device
JPS52155066A (en) * 1976-06-18 1977-12-23 Mitsubishi Electric Corp Screening method of thin metal film wirings of semiconductor device
JPS53124091A (en) * 1977-04-05 1978-10-30 Nec Corp Solid state electron device and its manufacture

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6034077A (en) * 1983-08-04 1985-02-21 Matsushita Electric Ind Co Ltd Solar cell element and manufacture thereof
JPS60177640A (en) * 1984-02-24 1985-09-11 Hitachi Ltd Semiconductor integrated circuit device
JPS61219154A (en) * 1985-03-25 1986-09-29 Nec Corp Semiconductor device
JPS6319833A (en) * 1986-07-14 1988-01-27 Agency Of Ind Science & Technol Method for testing semiconductor integrated circuit
JPH0344415B2 (en) * 1986-07-14 1991-07-05 Kogyo Gijutsuin
JPH01125875A (en) * 1988-10-19 1989-05-18 Matsushita Electric Ind Co Ltd Solar cell element
JPH0851135A (en) * 1995-06-26 1996-02-20 Seiko Epson Corp Wafer and verifying method therefor
US5903489A (en) * 1997-09-19 1999-05-11 Nec Corporation Semiconductor memory device having a monitoring pattern
JP2002286780A (en) * 2001-03-23 2002-10-03 Nippon Sheet Glass Co Ltd Inspection method of metal wiring and structure of semiconductor device suitable for inspection
US7253436B2 (en) 2003-07-25 2007-08-07 Matsushita Electric Industrial Co., Ltd. Resistance defect assessment device, resistance defect assessment method, and method for manufacturing resistance defect assessment device

Also Published As

Publication number Publication date
JPH0147011B2 (en) 1989-10-12

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