JPS5688334A - Bipolar semiconductor device - Google Patents
Bipolar semiconductor deviceInfo
- Publication number
- JPS5688334A JPS5688334A JP16523379A JP16523379A JPS5688334A JP S5688334 A JPS5688334 A JP S5688334A JP 16523379 A JP16523379 A JP 16523379A JP 16523379 A JP16523379 A JP 16523379A JP S5688334 A JPS5688334 A JP S5688334A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- type
- layer
- semiconductor device
- bipolar semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 2
- 238000002955 isolation Methods 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0772—Vertical bipolar transistor in combination with resistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Local Oxidation Of Silicon (AREA)
Abstract
PURPOSE:To obtain a bipolar semiconductor device of insulator isolation type formed with a resistor without particularly providing an occupying region. CONSTITUTION:n<+> type layers 2a, 2b and p type layers 3a, 3b are formed as isolated through an SiO2 layer 4 on a p type Si substrate, and a resistor 5 formed of an n type inversion layer is formed under the layer 4. Since the position of the resistor 5 is located at the position to be provided originally with an insulator isolation layer, it is not necessary to particularly provide a region exclusive for the resistor, thereby improving the integrity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16523379A JPS5688334A (en) | 1979-12-19 | 1979-12-19 | Bipolar semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16523379A JPS5688334A (en) | 1979-12-19 | 1979-12-19 | Bipolar semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5688334A true JPS5688334A (en) | 1981-07-17 |
Family
ID=15808381
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16523379A Pending JPS5688334A (en) | 1979-12-19 | 1979-12-19 | Bipolar semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5688334A (en) |
-
1979
- 1979-12-19 JP JP16523379A patent/JPS5688334A/en active Pending
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