JPH0851135A - Wafer and verifying method therefor - Google Patents
Wafer and verifying method thereforInfo
- Publication number
- JPH0851135A JPH0851135A JP15915295A JP15915295A JPH0851135A JP H0851135 A JPH0851135 A JP H0851135A JP 15915295 A JP15915295 A JP 15915295A JP 15915295 A JP15915295 A JP 15915295A JP H0851135 A JPH0851135 A JP H0851135A
- Authority
- JP
- Japan
- Prior art keywords
- chip
- corners
- monitor
- wafer
- semiconductor integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体集積回路の、卜
ランジスタのスレッシュホールド電圧、あるいは電流増
幅率などの半導体パラメータ検定用のモニ夕パターン配
置に関するものであるBACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a monitor pattern layout for verifying semiconductor parameters such as a threshold voltage of a transistor and a current amplification factor of a semiconductor integrated circuit.
【0002】[0002]
【従来の技術】半導体集積回路のモニ夕パターン配置に
関しては、従来よりチップの外周部などの任意の位置に
トランジスタなどの数種のモニタパターンをーケ所にま
とめて配置するのが一般的である。2. Description of the Related Art Conventionally, with respect to arrangement of a monitor pattern of a semiconductor integrated circuit, it has been customary to arrange several kinds of monitor patterns such as transistors at a desired location in an arbitrary position such as an outer peripheral portion of a chip. .
【0003】[0003]
【発明が解決しようとする課題】しかし、従来例では次
のような欠点を有している。モニ夕パターンを配置する
為のスぺースが必要であり、その分だけチップサイズが
大きくなってしまう。制約されたスぺースの中にモニタ
パターンを入れこもうとするので、モニタパターンのパ
ッド位置などの標準化が困難でる。However, the conventional example has the following drawbacks. A space for arranging the monitor pattern is required, and the chip size will increase accordingly. Since it tries to put the monitor pattern in the restricted space, it is difficult to standardize the pad position of the monitor pattern.
【0004】[0004]
【課題を解決するための手段】本発明はかかる欠点を除
去したものであり、本発明のウェハは、複数の半導体集
積回路が形成されるウェハにおいて、前記ウェハは、前
記半導体集積回路に於けるパラメー夕を検定するために
配置されるプロセスモニタパターンを有し、互いに隅が
隣接する複数の前記半導体集積回路は、互いに隣接して
いる隅にそれぞれの前記プロセスモニタパターンを配置
することを特徴とする。The present invention eliminates such drawbacks. The wafer of the present invention is a wafer on which a plurality of semiconductor integrated circuits are formed, and the wafer is the semiconductor integrated circuit. A plurality of semiconductor integrated circuits having a process monitor pattern arranged to calibrate a parameter, the corners of which are adjacent to each other, the process monitor patterns are arranged at the corners of the adjacent semiconductor integrated circuits. To do.
【0005】また、本発明のウェハの検定方法は、複数
の半導体集積回路が形成されるウェハの検定方法におい
て、互いに隅が隣接する複数の前記半導体集積回路の、
互いに隣接している隅に、それぞれの前記半導体集積回
路に於けるパラメー夕を検定するためのプロセスモニタ
パターンを形成し、前記互いに隣接している隅に配置さ
れるモニタパターンを一度に測定することを特徴とす
る。The wafer inspection method of the present invention is a wafer inspection method in which a plurality of semiconductor integrated circuits are formed.
Forming a process monitor pattern for verifying parameters in each of the semiconductor integrated circuits in the corners adjacent to each other, and measuring the monitor patterns arranged in the corners adjacent to each other at once. Is characterized by.
【0006】[0006]
【実施例】以下実施例に基づいて本発明を詳しく説明す
る。図1は、本発明の概略図である。lは半導体集積回
路のチップ外周を示す。2は半導体集積回路の機能パッ
ド、3,4,5,6は、各々チップの四隅に分散して配
置されたモニタパターンを示す。パッド2が配置されて
いないチップの四隅に、モニタパターンを分散配置する
ことによって、モニタパターン配置の為の特別なスぺー
スは不要である。また、図3は、チップの四隅に配置さ
れたモニタパターンの一実施例を示す図であり、lはチ
ップ外周、2は機能パッド、7はモニ夕パッド、8はパ
ラメータ検定用モニタ卜ランジスタである。前述のよう
にパッド2をチップの四隅を避けて配置すれば、チップ
の四隅には少なくとも、パッド2の大きさ以上のスぺー
スが確保できる。モニタパターン検定用のモニタパッド
は、一般的に機能パッド2の1/3〜1/2程度の大き
さで充分であるので、前述したチップ四隅のスぺースが
あれば、容易にモニタパッド位置の標準化が可能であ
る。EXAMPLES The present invention will be described in detail based on the following examples. FIG. 1 is a schematic diagram of the present invention. Reference numeral 1 denotes a chip outer circumference of the semiconductor integrated circuit. Reference numeral 2 is a functional pad of the semiconductor integrated circuit, and reference numerals 3, 4, 5, and 6 are monitor patterns dispersedly arranged at the four corners of the chip. By arranging the monitor patterns in the four corners of the chip where the pads 2 are not arranged, a special space for arranging the monitor patterns is unnecessary. FIG. 3 is a diagram showing an embodiment of monitor patterns arranged at the four corners of the chip, where 1 is a chip periphery, 2 is a functional pad, 7 is a monitor pad, and 8 is a parameter verification monitor transistor. is there. By arranging the pads 2 so as to avoid the four corners of the chip as described above, at least the space larger than the size of the pad 2 can be secured in the four corners of the chip. Since a monitor pad for monitor pattern verification generally has a size of about ⅓ to ½ of the function pad 2, it is possible to easily adjust the monitor pad position if there are the above-mentioned four corner spaces of the chip. Can be standardized.
【0007】チップを実装する方式によっては、チップ
の四隅に機能パッドを置けない場合があり、この場合に
本発明は特に有効である。Depending on the method of mounting the chip, it may not be possible to place the functional pads at the four corners of the chip. In this case, the present invention is particularly effective.
【0008】図2は、ウェハ状態でのモニタパターン配
置を示す。図1のように、モニタパターンをチップの四
隅に分散しても、モニタパターンの検定はウェハで行う
為、図2のようにモニタパターン3,4,5,6はlケ
所に集中する。プロセスモニタパターンは、プロセス管
理のためのものであり、ウェハ上の位置毎にデータが得
られればその目的は達成される。従ってウェハ上で異な
るチップの異なるモニタパターンが集中したとしても何
等不都合はなく、モニタパターンを分散配置しても測定
は容易に行える。モニタパターンを分散配置しても、集
中した結果大きなモニタパターンを用意したのと同じよ
うに、スレッシュホールド電圧、電流増幅率等の半導体
パラメータを一度に測定することができる。また、この
パ夕一ンはチップ上に形成されているため、チップを切
断後も使用することができ、チップ毎のプロセス管理を
行うこともできる。FIG. 2 shows a monitor pattern arrangement in a wafer state. Even if the monitor patterns are distributed in the four corners of the chip as shown in FIG. 1, the wafer is used to certify the monitor patterns, so that the monitor patterns 3, 4, 5 and 6 are concentrated at one position as shown in FIG. The process monitor pattern is for process management, and the purpose is achieved if data is obtained for each position on the wafer. Therefore, even if different monitor patterns of different chips are concentrated on the wafer, there is no inconvenience, and even if the monitor patterns are dispersed, the measurement can be easily performed. Even if the monitor patterns are arranged in a distributed manner, semiconductor parameters such as threshold voltage and current amplification factor can be measured at once, as in the case where a large monitor pattern is prepared as a result of concentration. Further, since this pattern is formed on the chip, it can be used even after the chip is cut, and process management for each chip can be performed.
【0009】[0009]
【発明の効果】以上のように、本発明ではモニターパタ
ーンを一カ所に集中することができるので、プロセスの
測定が非常に容易なウェハを提供できるという効果を有
する。As described above, according to the present invention, since the monitor patterns can be concentrated on one place, there is an effect that it is possible to provide a wafer whose process measurement is very easy.
【0010】また、本発明のウェハの検定方法では、プ
ロセスモニタパターンを1度に測定をするので、製造工
程数を少なくすることができる。Further, according to the wafer inspection method of the present invention, since the process monitor pattern is measured at one time, the number of manufacturing steps can be reduced.
【図1】本発明の一実施例を示すチップ状態の図であ
る。FIG. 1 is a diagram showing a chip state according to an embodiment of the present invention.
【図2】ウェハ状態を示す図である。FIG. 2 is a diagram showing a wafer state.
【図3】チップの隅に配置されたモニタパターンの一実
施例を示す図である。FIG. 3 is a diagram showing an example of a monitor pattern arranged in a corner of a chip.
【符号の説明】 l・・・・・チップ外周 2・・・・・機能パッド 3〜6・・・モニタパターン 7・・・・・モニタパツド 8・・・・・パラメータ検定用モニタトランジスタ[Explanation of Codes] l ... Chip periphery 2 ... Function pads 3-6 ... Monitor pattern 7 ... Monitor pad 8 ... Parameter verification monitor transistor
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H01L 21/822 H01L 27/04 E ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification number Office reference number FI technical display location H01L 21/822 H01L 27/04 E
Claims (2)
ハにおいて、 前記ウェハは、前記半導体集積回路に於けるパラメー夕
を検定するために配置されるプロセスモニタパターンを
有し、 互いに隅が隣接する複数の前記半導体集積回路は、互い
に隣接している隅にそれぞれの前記プロセスモニタパタ
ーンを配置することを特徴とするウェハ。1. A wafer on which a plurality of semiconductor integrated circuits are formed, wherein the wafer has a process monitor pattern arranged to inspect parameters in the semiconductor integrated circuit, and corners thereof are adjacent to each other. A wafer, wherein the plurality of semiconductor integrated circuits have the process monitor patterns arranged at corners adjacent to each other.
ハの検定方法において、 互いに隅が隣接する複数の前記半導体集積回路の、互い
に隣接している隅に、それぞれの前記半導体集積回路に
於けるパラメー夕を検定するためのプロセスモニタパタ
ーンを形成し、 前記互いに隣接している隅に配置されるモニタパターン
を一度に測定することを特徴とするウェハの検定方法。2. A wafer certifying method in which a plurality of semiconductor integrated circuits are formed, wherein a plurality of semiconductor integrated circuits whose corners are adjacent to each other are provided at the corners adjacent to each other. A method for certifying a wafer, comprising forming a process monitor pattern for certifying a parameter, and measuring the monitor patterns arranged at the corners adjacent to each other at once.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15915295A JPH0851135A (en) | 1995-06-26 | 1995-06-26 | Wafer and verifying method therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15915295A JPH0851135A (en) | 1995-06-26 | 1995-06-26 | Wafer and verifying method therefor |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58191536A Division JPH0658929B2 (en) | 1983-10-13 | 1983-10-13 | Process monitor pattern |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9000102A Division JPH09172049A (en) | 1997-01-06 | 1997-01-06 | Wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0851135A true JPH0851135A (en) | 1996-02-20 |
Family
ID=15687408
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15915295A Pending JPH0851135A (en) | 1995-06-26 | 1995-06-26 | Wafer and verifying method therefor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0851135A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007042967A (en) * | 2005-08-05 | 2007-02-15 | Matsushita Electric Ind Co Ltd | Semiconductor device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5683955A (en) * | 1979-12-13 | 1981-07-08 | Nec Corp | Manufacturing of semiconductor |
JPS57113241A (en) * | 1980-12-30 | 1982-07-14 | Seiko Epson Corp | Semiconductor device |
JPS5861639A (en) * | 1981-10-08 | 1983-04-12 | Toshiba Corp | Semiconductor device |
JPH0658929A (en) * | 1992-08-06 | 1994-03-04 | Toto Ltd | Urinal for urinalysis |
-
1995
- 1995-06-26 JP JP15915295A patent/JPH0851135A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5683955A (en) * | 1979-12-13 | 1981-07-08 | Nec Corp | Manufacturing of semiconductor |
JPS57113241A (en) * | 1980-12-30 | 1982-07-14 | Seiko Epson Corp | Semiconductor device |
JPS5861639A (en) * | 1981-10-08 | 1983-04-12 | Toshiba Corp | Semiconductor device |
JPH0658929A (en) * | 1992-08-06 | 1994-03-04 | Toto Ltd | Urinal for urinalysis |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007042967A (en) * | 2005-08-05 | 2007-02-15 | Matsushita Electric Ind Co Ltd | Semiconductor device |
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