JPS55117233A - Semiconductor device and manufacturing thereof - Google Patents

Semiconductor device and manufacturing thereof

Info

Publication number
JPS55117233A
JPS55117233A JP2371179A JP2371179A JPS55117233A JP S55117233 A JPS55117233 A JP S55117233A JP 2371179 A JP2371179 A JP 2371179A JP 2371179 A JP2371179 A JP 2371179A JP S55117233 A JPS55117233 A JP S55117233A
Authority
JP
Japan
Prior art keywords
impurity
semiconductor device
diffused
diffused layer
covalent bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2371179A
Other languages
Japanese (ja)
Inventor
Masanobu Ogino
Masaharu Watanabe
Yasuhisa Oana
Norihei Takai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd, Toshiba Ceramics Co Ltd filed Critical Toshiba Corp
Priority to JP2371179A priority Critical patent/JPS55117233A/en
Publication of JPS55117233A publication Critical patent/JPS55117233A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase

Abstract

PURPOSE:To eliminate strain or dislocation and obtain a semiconductor device of good electric properties, by using Ge and an impurity having covalent bonding smaller than the covalent bonding radius of Si to produce a diffused layer on an Si substrate. CONSTITUTION:A diffused layer 12 is produced in a surface part of an Si substrate 11. A protective film 14 is coated on a doped layer 13 on the diffused layer 12 to prevent an impurity from being diffused out. A semiconductor device 10 is thus manufactured. A mixture of Ge and an impurity such as P or B having a smaller convalent bonding radius than Si is used for the diffused layer 12 depending on an electroconductive type to be obtained. The ratio of the diffused quantity of the impurity to that of the Ge in the diffused layer 12 is prescribed at 1.30 or less. The atom bonding radius is made uniform by the impurity of smaller covalent bonding radius and the Ge of larger covalent bonding radius. This results in making the semiconductor device undefective.
JP2371179A 1979-03-01 1979-03-01 Semiconductor device and manufacturing thereof Pending JPS55117233A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2371179A JPS55117233A (en) 1979-03-01 1979-03-01 Semiconductor device and manufacturing thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2371179A JPS55117233A (en) 1979-03-01 1979-03-01 Semiconductor device and manufacturing thereof

Publications (1)

Publication Number Publication Date
JPS55117233A true JPS55117233A (en) 1980-09-09

Family

ID=12117921

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2371179A Pending JPS55117233A (en) 1979-03-01 1979-03-01 Semiconductor device and manufacturing thereof

Country Status (1)

Country Link
JP (1) JPS55117233A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5095358A (en) * 1990-04-18 1992-03-10 National Semiconductor Corporation Application of electronic properties of germanium to inhibit n-type or p-type diffusion in silicon
US5142641A (en) * 1988-03-23 1992-08-25 Fujitsu Limited CMOS structure for eliminating latch-up of parasitic thyristor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5142641A (en) * 1988-03-23 1992-08-25 Fujitsu Limited CMOS structure for eliminating latch-up of parasitic thyristor
US5095358A (en) * 1990-04-18 1992-03-10 National Semiconductor Corporation Application of electronic properties of germanium to inhibit n-type or p-type diffusion in silicon

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