JPS5678130A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS5678130A
JPS5678130A JP15445079A JP15445079A JPS5678130A JP S5678130 A JPS5678130 A JP S5678130A JP 15445079 A JP15445079 A JP 15445079A JP 15445079 A JP15445079 A JP 15445079A JP S5678130 A JPS5678130 A JP S5678130A
Authority
JP
Japan
Prior art keywords
solid
layer
semiconductor device
adhesiveness
sintering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15445079A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6141135B2 (cg-RX-API-DMAC10.html
Inventor
Hitoshi Onuki
Hiroshi Soeno
Keiichi Morita
Kyukichi Onodera
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15445079A priority Critical patent/JPS5678130A/ja
Priority to DE19803044514 priority patent/DE3044514A1/de
Publication of JPS5678130A publication Critical patent/JPS5678130A/ja
Priority to US06/544,119 priority patent/US4500904A/en
Publication of JPS6141135B2 publication Critical patent/JPS6141135B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W76/138—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10W70/24—
    • H10W70/28—
    • H10W72/30—
    • H10W72/073—
    • H10W72/07336—
    • H10W72/07337—
    • H10W72/352—
    • H10W72/354—

Landscapes

  • Die Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)
JP15445079A 1979-11-30 1979-11-30 Semiconductor device and its manufacture Granted JPS5678130A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP15445079A JPS5678130A (en) 1979-11-30 1979-11-30 Semiconductor device and its manufacture
DE19803044514 DE3044514A1 (de) 1979-11-30 1980-11-26 Halbleiteranordnung
US06/544,119 US4500904A (en) 1979-11-30 1983-10-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15445079A JPS5678130A (en) 1979-11-30 1979-11-30 Semiconductor device and its manufacture

Publications (2)

Publication Number Publication Date
JPS5678130A true JPS5678130A (en) 1981-06-26
JPS6141135B2 JPS6141135B2 (cg-RX-API-DMAC10.html) 1986-09-12

Family

ID=15584474

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15445079A Granted JPS5678130A (en) 1979-11-30 1979-11-30 Semiconductor device and its manufacture

Country Status (3)

Country Link
US (1) US4500904A (cg-RX-API-DMAC10.html)
JP (1) JPS5678130A (cg-RX-API-DMAC10.html)
DE (1) DE3044514A1 (cg-RX-API-DMAC10.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009182209A (ja) * 2008-01-31 2009-08-13 Nissan Motor Co Ltd 半導体装置
JP2015185612A (ja) * 2014-03-20 2015-10-22 株式会社豊田中央研究所 接合構造体およびその製造方法
CN110988055A (zh) * 2019-12-08 2020-04-10 南京云优生物科技有限公司 一种痕量重金属无汞化检测装置及其电极处理方法和检测方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5921032A (ja) * 1982-07-26 1984-02-02 Sumitomo Electric Ind Ltd 半導体装置用基板
EP0263146A1 (en) * 1986-03-19 1988-04-13 Analog Devices, Inc. Aluminum-backed wafer and chip
US4953003A (en) * 1987-05-21 1990-08-28 Siemens Aktiengesellschaft Power semiconductor device
US4921158A (en) 1989-02-24 1990-05-01 General Instrument Corporation Brazing material
US5686676A (en) * 1996-05-07 1997-11-11 Brush Wellman Inc. Process for making improved copper/tungsten composites
US6897567B2 (en) * 2000-07-31 2005-05-24 Romh Co., Ltd. Method of making wireless semiconductor device, and leadframe used therefor
US7181919B2 (en) * 2004-03-31 2007-02-27 Denso Corporation System utilizing waste heat of internal combustion engine
DE102005046710B4 (de) * 2005-09-29 2012-12-06 Infineon Technologies Ag Verfahren zur Herstellung einer Bauelementanordnung mit einem Träger und einem darauf montierten Halbleiterchip
DE102011114530B4 (de) * 2011-09-29 2023-04-20 Waldemar Hoening Ohg Verfahren und Vorrichtung zur Herstellung einer verlötbaren Siebelektrode
JP6409690B2 (ja) * 2014-11-20 2018-10-24 株式会社デンソー 冷却モジュール

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1248814B (de) * 1962-05-28 1968-03-14 Siemens Ag Halbleiterbauelement und zugehörige Kühlordnung
US3341753A (en) * 1964-10-21 1967-09-12 Texas Instruments Inc Metallic contacts for semiconductor devices
US3297921A (en) * 1965-04-15 1967-01-10 Int Rectifier Corp Controlled rectifier having shunted emitter formed by a nickel layer underneath an aluminum layer
US3368124A (en) * 1965-12-09 1968-02-06 Rca Corp Semiconductor devices
DE1614668B2 (de) * 1967-12-01 1974-08-29 Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg Halbleiter-Anordnung mit Großflächigen, gut lötbaren Kontaktelektroden und Verfahren zu ihrer Herstellung
FR2000604A1 (cg-RX-API-DMAC10.html) * 1968-01-23 1969-09-12 Mitsubishi Electric Corp
US3609470A (en) * 1968-02-19 1971-09-28 Ibm Semiconductor devices with lines and electrodes which contain 2 to 3 percent silicon with the remainder aluminum
JPS4913914B1 (cg-RX-API-DMAC10.html) * 1969-12-25 1974-04-03
US3830657A (en) * 1971-06-30 1974-08-20 Ibm Method for making integrated circuit contact structure

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009182209A (ja) * 2008-01-31 2009-08-13 Nissan Motor Co Ltd 半導体装置
JP2015185612A (ja) * 2014-03-20 2015-10-22 株式会社豊田中央研究所 接合構造体およびその製造方法
US9349704B2 (en) 2014-03-20 2016-05-24 Kabushiki Kaisha Toyota Chuo Kenkyusho Jointed structure and method of manufacturing same
CN110988055A (zh) * 2019-12-08 2020-04-10 南京云优生物科技有限公司 一种痕量重金属无汞化检测装置及其电极处理方法和检测方法

Also Published As

Publication number Publication date
DE3044514A1 (de) 1981-09-03
DE3044514C2 (cg-RX-API-DMAC10.html) 1989-06-22
US4500904A (en) 1985-02-19
JPS6141135B2 (cg-RX-API-DMAC10.html) 1986-09-12

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