JPS5676537A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5676537A
JPS5676537A JP15341979A JP15341979A JPS5676537A JP S5676537 A JPS5676537 A JP S5676537A JP 15341979 A JP15341979 A JP 15341979A JP 15341979 A JP15341979 A JP 15341979A JP S5676537 A JPS5676537 A JP S5676537A
Authority
JP
Japan
Prior art keywords
layer
insulating film
amorphous
manufacture
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15341979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6211781B2 (enrdf_load_stackoverflow
Inventor
Yoshiiku Togei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15341979A priority Critical patent/JPS5676537A/ja
Publication of JPS5676537A publication Critical patent/JPS5676537A/ja
Publication of JPS6211781B2 publication Critical patent/JPS6211781B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32105—Oxidation of silicon-containing layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
JP15341979A 1979-11-27 1979-11-27 Manufacture of semiconductor device Granted JPS5676537A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15341979A JPS5676537A (en) 1979-11-27 1979-11-27 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15341979A JPS5676537A (en) 1979-11-27 1979-11-27 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5676537A true JPS5676537A (en) 1981-06-24
JPS6211781B2 JPS6211781B2 (enrdf_load_stackoverflow) 1987-03-14

Family

ID=15562082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15341979A Granted JPS5676537A (en) 1979-11-27 1979-11-27 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5676537A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5878465A (ja) * 1981-11-04 1983-05-12 Toshiba Corp 半導体装置の製造方法
FR2536208A1 (fr) * 1982-11-12 1984-05-18 Rca Corp Procede de formation de bioxyde de silicium et dispositif a semi-conducteurs avec une couche de bioxyde de silicium
JPS59127841A (ja) * 1983-01-12 1984-07-23 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JPS59184547A (ja) * 1983-04-04 1984-10-19 Agency Of Ind Science & Technol 半導体装置及びその製造方法
JPS63502470A (ja) * 1986-02-25 1988-09-14 アメリカン　テレフォン　アンド　テレグラフ　カムパニ− 誘電体薄層を有する装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS504314A (enrdf_load_stackoverflow) * 1973-05-17 1975-01-17
JPS5436181A (en) * 1977-08-26 1979-03-16 Fujitsu Ltd Manufacture for semiconductor device
JPS54128678A (en) * 1978-03-30 1979-10-05 Toshiba Corp Forming method of insulation film

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS504314A (enrdf_load_stackoverflow) * 1973-05-17 1975-01-17
JPS5436181A (en) * 1977-08-26 1979-03-16 Fujitsu Ltd Manufacture for semiconductor device
JPS54128678A (en) * 1978-03-30 1979-10-05 Toshiba Corp Forming method of insulation film

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5878465A (ja) * 1981-11-04 1983-05-12 Toshiba Corp 半導体装置の製造方法
FR2536208A1 (fr) * 1982-11-12 1984-05-18 Rca Corp Procede de formation de bioxyde de silicium et dispositif a semi-conducteurs avec une couche de bioxyde de silicium
JPS59103347A (ja) * 1982-11-12 1984-06-14 ゼネラル・エレクトリック・カンパニイ シリコン層上に２酸化シリコンの絶縁誘電体層を有する半導体装置とその製造法
JPS59127841A (ja) * 1983-01-12 1984-07-23 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JPS59184547A (ja) * 1983-04-04 1984-10-19 Agency Of Ind Science & Technol 半導体装置及びその製造方法
JPS63502470A (ja) * 1986-02-25 1988-09-14 アメリカン　テレフォン　アンド　テレグラフ　カムパニ− 誘電体薄層を有する装置の製造方法

Also Published As

Publication number Publication date
JPS6211781B2 (enrdf_load_stackoverflow) 1987-03-14

Similar Documents

Publication Publication Date Title
JPS5457875A (en) Semiconductor nonvolatile memory device
JPS5477081A (en) Semiconductor device and production of the same
JPS5676537A (en) Manufacture of semiconductor device
JPS6459866A (en) Manufacture of mos transistor
JPS5544713A (en) Semiconductor device
GB2016803A (en) Thin film transistor construction and manufacturing method of the same
JPS52135678A (en) Semiconductor device and its productions
JPS5539631A (en) Semiconductor device
JPS5341986A (en) Production of semiconductor unit
JPS52109883A (en) Manufacture of silicon semiconductor device
JPS54159886A (en) Production of semiconductor device
JPS53145572A (en) Production of semiconductor device
JPS5410688A (en) Production of semiconductor device
JPS5350689A (en) Electrolumiescence device
JPS539483A (en) Semiconductor device
JPS54159885A (en) Production of semiconductor device
JPS5681969A (en) Manufacture of semiconductor device
JPS5227362A (en) Formation method of passivation film
JPS5522885A (en) Insulation gate type field effect semiconductor device
JPS5320862A (en) Production of semiconductor device
JPS5258890A (en) Power cable
JPS5562760A (en) Semiconductor device
JPS5536976A (en) Production of semiconductor device
JPS6410647A (en) Manufacture of semiconductor device
JPS53147482A (en) Production of semiconductor device