JPS5676043A - Compound field effect transistor for ion sensor - Google Patents
Compound field effect transistor for ion sensorInfo
- Publication number
- JPS5676043A JPS5676043A JP15387679A JP15387679A JPS5676043A JP S5676043 A JPS5676043 A JP S5676043A JP 15387679 A JP15387679 A JP 15387679A JP 15387679 A JP15387679 A JP 15387679A JP S5676043 A JPS5676043 A JP S5676043A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- polysilicon
- areas
- compound field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title abstract 2
- 230000005669 field effect Effects 0.000 title abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229920005591 polysilicon Polymers 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000008280 blood Substances 0.000 abstract 1
- 210000004369 blood Anatomy 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 239000012141 concentrate Substances 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000003792 electrolyte Substances 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15387679A JPS5676043A (en) | 1979-11-28 | 1979-11-28 | Compound field effect transistor for ion sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15387679A JPS5676043A (en) | 1979-11-28 | 1979-11-28 | Compound field effect transistor for ion sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5676043A true JPS5676043A (en) | 1981-06-23 |
| JPS6152947B2 JPS6152947B2 (cs) | 1986-11-15 |
Family
ID=15572035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15387679A Granted JPS5676043A (en) | 1979-11-28 | 1979-11-28 | Compound field effect transistor for ion sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5676043A (cs) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7329387B2 (en) | 2003-08-11 | 2008-02-12 | Canon Kabushiki Kaisha | Field-effect transistor, sensor using it, and production method thereof |
-
1979
- 1979-11-28 JP JP15387679A patent/JPS5676043A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7329387B2 (en) | 2003-08-11 | 2008-02-12 | Canon Kabushiki Kaisha | Field-effect transistor, sensor using it, and production method thereof |
| US7829362B2 (en) | 2003-08-11 | 2010-11-09 | Canon Kabushiki Kaisha | Field-effect transistor, sensor using it, and production method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6152947B2 (cs) | 1986-11-15 |
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