JPS6152947B2 - - Google Patents
Info
- Publication number
- JPS6152947B2 JPS6152947B2 JP54153876A JP15387679A JPS6152947B2 JP S6152947 B2 JPS6152947 B2 JP S6152947B2 JP 54153876 A JP54153876 A JP 54153876A JP 15387679 A JP15387679 A JP 15387679A JP S6152947 B2 JPS6152947 B2 JP S6152947B2
- Authority
- JP
- Japan
- Prior art keywords
- source
- region
- semiconductor substrate
- drain region
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 8
- 239000008280 blood Substances 0.000 description 7
- 210000004369 blood Anatomy 0.000 description 7
- 239000013078 crystal Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- NPYPAHLBTDXSSS-UHFFFAOYSA-N Potassium ion Chemical compound [K+] NPYPAHLBTDXSSS-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 101150068246 V-MOS gene Proteins 0.000 description 1
- 210000004204 blood vessel Anatomy 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- -1 sodium (Na + ) Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15387679A JPS5676043A (en) | 1979-11-28 | 1979-11-28 | Compound field effect transistor for ion sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15387679A JPS5676043A (en) | 1979-11-28 | 1979-11-28 | Compound field effect transistor for ion sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5676043A JPS5676043A (en) | 1981-06-23 |
| JPS6152947B2 true JPS6152947B2 (cs) | 1986-11-15 |
Family
ID=15572035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15387679A Granted JPS5676043A (en) | 1979-11-28 | 1979-11-28 | Compound field effect transistor for ion sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5676043A (cs) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4438049B2 (ja) | 2003-08-11 | 2010-03-24 | キヤノン株式会社 | 電界効果トランジスタ及びそれを用いたセンサ並びにその製造方法 |
-
1979
- 1979-11-28 JP JP15387679A patent/JPS5676043A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5676043A (en) | 1981-06-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4354308A (en) | Method for manufacture of a selective chemical sensitive FET transducer | |
| JPH0736437B2 (ja) | 半導体メモリの製造方法 | |
| JPS6421967A (en) | Semiconductor device and manufacture thereof | |
| JPH01198065A (ja) | 半導体記憶装置 | |
| JPS6152947B2 (cs) | ||
| JP3167022B2 (ja) | ガスセンサ | |
| JPS6134617B2 (cs) | ||
| JPH027423B2 (cs) | ||
| TWI454695B (zh) | 金氧半場效電晶體感測器結構 | |
| JPH0469338B2 (cs) | ||
| JPS62210678A (ja) | 半導体集積回路装置及びその製造方法 | |
| JPH0429974B2 (cs) | ||
| JPS62110145A (ja) | 環境検知装置及びその製造方法 | |
| JPS61263152A (ja) | マスクｒｏｍ装置 | |
| JPS59142453A (ja) | イオンセンサ | |
| JPH01189966A (ja) | 不揮発性半導体メモリ装置 | |
| JPH0452409B2 (cs) | ||
| JPH029306B2 (cs) | ||
| JP2999522B2 (ja) | イオンセンサ | |
| JPS60202347A (ja) | 電界効果型半導体センサ | |
| JP2000187016A (ja) | 半導体イオンセンサ | |
| JPH0283968A (ja) | 半導体記憶装置およびその製造方法 | |
| JPH0549187B2 (cs) | ||
| JPH0241581Y2 (cs) | ||
| JPS6135511B2 (cs) |