JPS567462A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS567462A
JPS567462A JP8136779A JP8136779A JPS567462A JP S567462 A JPS567462 A JP S567462A JP 8136779 A JP8136779 A JP 8136779A JP 8136779 A JP8136779 A JP 8136779A JP S567462 A JPS567462 A JP S567462A
Authority
JP
Japan
Prior art keywords
poly
covered
layers
emitter
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8136779A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6358375B2 (enrdf_load_stackoverflow
Inventor
Akira Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8136779A priority Critical patent/JPS567462A/ja
Publication of JPS567462A publication Critical patent/JPS567462A/ja
Publication of JPS6358375B2 publication Critical patent/JPS6358375B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP8136779A 1979-06-29 1979-06-29 Semiconductor device and its manufacture Granted JPS567462A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8136779A JPS567462A (en) 1979-06-29 1979-06-29 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8136779A JPS567462A (en) 1979-06-29 1979-06-29 Semiconductor device and its manufacture

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP61146897A Division JPS6216559A (ja) 1986-06-25 1986-06-25 半導体装置の製法

Publications (2)

Publication Number Publication Date
JPS567462A true JPS567462A (en) 1981-01-26
JPS6358375B2 JPS6358375B2 (enrdf_load_stackoverflow) 1988-11-15

Family

ID=13744339

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8136779A Granted JPS567462A (en) 1979-06-29 1979-06-29 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS567462A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58222556A (ja) * 1982-06-21 1983-12-24 Hitachi Ltd 半導体装置の製造方法
JPS5931052A (ja) * 1982-08-13 1984-02-18 Hitachi Ltd 半導体集積回路装置の製造方法
JPS61125165A (ja) * 1984-11-22 1986-06-12 Hitachi Ltd 半導体装置の製造方法
JPS6337642A (ja) * 1986-07-31 1988-02-18 Mitsubishi Electric Corp 半導体集積回路装置
JPS6372148A (ja) * 1986-09-12 1988-04-01 Mitsubishi Electric Corp 半導体集積回路装置の製造方法
JPS63131563A (ja) * 1986-11-20 1988-06-03 Mitsubishi Electric Corp 半導体集積回路装置
JPH0653420A (ja) * 1992-06-16 1994-02-25 Samsung Electron Co Ltd ＢｉＣＭＯＳトランジスタ及びその製造方法
US9893585B2 (en) 2012-08-01 2018-02-13 Dyson Technology Limited Motor mount

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5140866A (enrdf_load_stackoverflow) * 1974-10-04 1976-04-06 Nippon Electric Co
JPS52113774U (enrdf_load_stackoverflow) * 1976-02-24 1977-08-29
JPS5448180A (en) * 1977-09-22 1979-04-16 Nippon Precision Circuits Semiconductor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5140866A (enrdf_load_stackoverflow) * 1974-10-04 1976-04-06 Nippon Electric Co
JPS52113774U (enrdf_load_stackoverflow) * 1976-02-24 1977-08-29
JPS5448180A (en) * 1977-09-22 1979-04-16 Nippon Precision Circuits Semiconductor

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58222556A (ja) * 1982-06-21 1983-12-24 Hitachi Ltd 半導体装置の製造方法
JPS5931052A (ja) * 1982-08-13 1984-02-18 Hitachi Ltd 半導体集積回路装置の製造方法
JPS61125165A (ja) * 1984-11-22 1986-06-12 Hitachi Ltd 半導体装置の製造方法
JPS6337642A (ja) * 1986-07-31 1988-02-18 Mitsubishi Electric Corp 半導体集積回路装置
JPS6372148A (ja) * 1986-09-12 1988-04-01 Mitsubishi Electric Corp 半導体集積回路装置の製造方法
JPS63131563A (ja) * 1986-11-20 1988-06-03 Mitsubishi Electric Corp 半導体集積回路装置
JPH0653420A (ja) * 1992-06-16 1994-02-25 Samsung Electron Co Ltd ＢｉＣＭＯＳトランジスタ及びその製造方法
US9893585B2 (en) 2012-08-01 2018-02-13 Dyson Technology Limited Motor mount

Also Published As

Publication number Publication date
JPS6358375B2 (enrdf_load_stackoverflow) 1988-11-15

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