JPS6358375B2 - - Google Patents

Info

Publication number
JPS6358375B2
JPS6358375B2 JP54081367A JP8136779A JPS6358375B2 JP S6358375 B2 JPS6358375 B2 JP S6358375B2 JP 54081367 A JP54081367 A JP 54081367A JP 8136779 A JP8136779 A JP 8136779A JP S6358375 B2 JPS6358375 B2 JP S6358375B2
Authority
JP
Japan
Prior art keywords
drain
substrate
source
conductivity type
bipolar transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54081367A
Other languages
English (en)
Japanese (ja)
Other versions
JPS567462A (en
Inventor
Akira Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8136779A priority Critical patent/JPS567462A/ja
Publication of JPS567462A publication Critical patent/JPS567462A/ja
Publication of JPS6358375B2 publication Critical patent/JPS6358375B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP8136779A 1979-06-29 1979-06-29 Semiconductor device and its manufacture Granted JPS567462A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8136779A JPS567462A (en) 1979-06-29 1979-06-29 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8136779A JPS567462A (en) 1979-06-29 1979-06-29 Semiconductor device and its manufacture

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP61146897A Division JPS6216559A (ja) 1986-06-25 1986-06-25 半導体装置の製法

Publications (2)

Publication Number Publication Date
JPS567462A JPS567462A (en) 1981-01-26
JPS6358375B2 true JPS6358375B2 (enrdf_load_stackoverflow) 1988-11-15

Family

ID=13744339

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8136779A Granted JPS567462A (en) 1979-06-29 1979-06-29 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS567462A (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58222556A (ja) * 1982-06-21 1983-12-24 Hitachi Ltd 半導体装置の製造方法
JPS5931052A (ja) * 1982-08-13 1984-02-18 Hitachi Ltd 半導体集積回路装置の製造方法
JPH0652778B2 (ja) * 1984-11-22 1994-07-06 株式会社日立製作所 半導体装置の製造方法
JPS6337642A (ja) * 1986-07-31 1988-02-18 Mitsubishi Electric Corp 半導体集積回路装置
JPH0734453B2 (ja) * 1986-09-12 1995-04-12 三菱電機株式会社 半導体集積回路装置の製造方法
JPS63131563A (ja) * 1986-11-20 1988-06-03 Mitsubishi Electric Corp 半導体集積回路装置
KR930011223A (ko) * 1992-06-16 1993-06-24 김광호 바이씨모스 트랜지스터 및 그 제조방법
GB2504520B (en) 2012-08-01 2016-05-18 Dyson Technology Ltd Motor mount

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5915495B2 (ja) * 1974-10-04 1984-04-10 日本電気株式会社 半導体装置
JPS52113774U (enrdf_load_stackoverflow) * 1976-02-24 1977-08-29
JPS5448180A (en) * 1977-09-22 1979-04-16 Nippon Precision Circuits Semiconductor

Also Published As

Publication number Publication date
JPS567462A (en) 1981-01-26

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