JPS6410952B2 - - Google Patents
Info
- Publication number
- JPS6410952B2 JPS6410952B2 JP2895078A JP2895078A JPS6410952B2 JP S6410952 B2 JPS6410952 B2 JP S6410952B2 JP 2895078 A JP2895078 A JP 2895078A JP 2895078 A JP2895078 A JP 2895078A JP S6410952 B2 JPS6410952 B2 JP S6410952B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductivity type
- drain
- source
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000005669 field effect Effects 0.000 claims description 7
- 108091006146 Channels Proteins 0.000 description 14
- 238000000034 method Methods 0.000 description 9
- 150000004767 nitrides Chemical class 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- -1 boron Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2895078A JPS54121071A (en) | 1978-03-13 | 1978-03-13 | Insulator gate type field effect semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2895078A JPS54121071A (en) | 1978-03-13 | 1978-03-13 | Insulator gate type field effect semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54121071A JPS54121071A (en) | 1979-09-19 |
| JPS6410952B2 true JPS6410952B2 (enrdf_load_stackoverflow) | 1989-02-22 |
Family
ID=12262678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2895078A Granted JPS54121071A (en) | 1978-03-13 | 1978-03-13 | Insulator gate type field effect semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54121071A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5047812A (en) * | 1989-02-27 | 1991-09-10 | Motorola, Inc. | Insulated gate field effect device |
| JP2848757B2 (ja) * | 1993-03-19 | 1999-01-20 | シャープ株式会社 | 電界効果トランジスタおよびその製造方法 |
| JPH08316426A (ja) * | 1995-05-16 | 1996-11-29 | Nittetsu Semiconductor Kk | Ｍｏｓ型半導体装置およびその製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS508484A (enrdf_load_stackoverflow) * | 1973-05-21 | 1975-01-28 |
-
1978
- 1978-03-13 JP JP2895078A patent/JPS54121071A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54121071A (en) | 1979-09-19 |
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