JPH0441503B2 - - Google Patents
Info
- Publication number
- JPH0441503B2 JPH0441503B2 JP58249707A JP24970783A JPH0441503B2 JP H0441503 B2 JPH0441503 B2 JP H0441503B2 JP 58249707 A JP58249707 A JP 58249707A JP 24970783 A JP24970783 A JP 24970783A JP H0441503 B2 JPH0441503 B2 JP H0441503B2
- Authority
- JP
- Japan
- Prior art keywords
- bipolar transistor
- mosfet
- offset
- semiconductor device
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- -1 Boron ions Chemical class 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58249707A JPS60137055A (ja) | 1983-12-26 | 1983-12-26 | Ｍｏｓｆｅｔとバイポ−ラトランジスタとが混在する半導体装置及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58249707A JPS60137055A (ja) | 1983-12-26 | 1983-12-26 | Ｍｏｓｆｅｔとバイポ−ラトランジスタとが混在する半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60137055A JPS60137055A (ja) | 1985-07-20 |
| JPH0441503B2 true JPH0441503B2 (enrdf_load_stackoverflow) | 1992-07-08 |
Family
ID=17197001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58249707A Granted JPS60137055A (ja) | 1983-12-26 | 1983-12-26 | Ｍｏｓｆｅｔとバイポ−ラトランジスタとが混在する半導体装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60137055A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4752589A (en) * | 1985-12-17 | 1988-06-21 | Siemens Aktiengesellschaft | Process for the production of bipolar transistors and complementary MOS transistors on a common silicon substrate |
| EP0256315B1 (de) * | 1986-08-13 | 1992-01-29 | Siemens Aktiengesellschaft | Integrierte Bipolar- und komplementäre MOS-Transistoren auf einem gemeinsamen Substrat enthaltende Schaltung und Verfahren zu ihrer Herstellung |
| JPH02103960A (ja) * | 1988-10-13 | 1990-04-17 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
-
1983
- 1983-12-26 JP JP58249707A patent/JPS60137055A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60137055A (ja) | 1985-07-20 |
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