JPS567439A - Treating method for semiconductor substrate - Google Patents

Treating method for semiconductor substrate

Info

Publication number
JPS567439A
JPS567439A JP8321079A JP8321079A JPS567439A JP S567439 A JPS567439 A JP S567439A JP 8321079 A JP8321079 A JP 8321079A JP 8321079 A JP8321079 A JP 8321079A JP S567439 A JPS567439 A JP S567439A
Authority
JP
Japan
Prior art keywords
regions
damaged
heated
beams
irradiated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8321079A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6125214B2 (enrdf_load_html_response
Inventor
Takanori Hayafuji
Yoshio Aoki
Seiji Kawato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP8321079A priority Critical patent/JPS567439A/ja
Publication of JPS567439A publication Critical patent/JPS567439A/ja
Publication of JPS6125214B2 publication Critical patent/JPS6125214B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Semiconductor Memories (AREA)
JP8321079A 1979-06-29 1979-06-29 Treating method for semiconductor substrate Granted JPS567439A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8321079A JPS567439A (en) 1979-06-29 1979-06-29 Treating method for semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8321079A JPS567439A (en) 1979-06-29 1979-06-29 Treating method for semiconductor substrate

Publications (2)

Publication Number Publication Date
JPS567439A true JPS567439A (en) 1981-01-26
JPS6125214B2 JPS6125214B2 (enrdf_load_html_response) 1986-06-14

Family

ID=13795954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8321079A Granted JPS567439A (en) 1979-06-29 1979-06-29 Treating method for semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS567439A (enrdf_load_html_response)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59115530A (ja) * 1982-12-15 1984-07-04 ワツカ−−ヘミトロニク・ゲゼルシヤフト・フユア・エレクトロニク−グルントシユトツフエ・ミツト・ベシユレンクテル・ハフツング 裏面がゲツタ−リング作用を有する半導体ウエフアの製造方法
WO1990000812A1 (en) * 1988-07-08 1990-01-25 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
US5099557A (en) * 1988-07-08 1992-03-31 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
US5531857A (en) * 1988-07-08 1996-07-02 Cauldron Limited Partnership Removal of surface contaminants by irradiation from a high energy source
US5821175A (en) * 1988-07-08 1998-10-13 Cauldron Limited Partnership Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59115530A (ja) * 1982-12-15 1984-07-04 ワツカ−−ヘミトロニク・ゲゼルシヤフト・フユア・エレクトロニク−グルントシユトツフエ・ミツト・ベシユレンクテル・ハフツング 裏面がゲツタ−リング作用を有する半導体ウエフアの製造方法
WO1990000812A1 (en) * 1988-07-08 1990-01-25 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
US5024968A (en) * 1988-07-08 1991-06-18 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
US5099557A (en) * 1988-07-08 1992-03-31 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
US5531857A (en) * 1988-07-08 1996-07-02 Cauldron Limited Partnership Removal of surface contaminants by irradiation from a high energy source
US5821175A (en) * 1988-07-08 1998-10-13 Cauldron Limited Partnership Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface

Also Published As

Publication number Publication date
JPS6125214B2 (enrdf_load_html_response) 1986-06-14

Similar Documents

Publication Publication Date Title
JPS5567132A (en) Method for manufacturing semiconductor device
JPS567439A (en) Treating method for semiconductor substrate
JPS5731144A (en) Mamufacture of semiconductor device
JPS566432A (en) Treatment of semiconductor substrate
JPS567436A (en) High pressure treating device
JPS5352354A (en) Semiconductor local heating method
JPS5420671A (en) Production of semiconductor devices
JPS57136334A (en) Manufacture of semiconductor device
JPS57177530A (en) Processing of semiconductor wafer
JPS5568638A (en) Treating method of semiconductor surface with heat
JPS55111170A (en) Method of manufacturing semiconductor device
JPS57199227A (en) Manufacture of semiconductor device
JPS56130914A (en) Manufacture of semiconductor device
JPS5533020A (en) Manufacture of semiconductor device
JPS566434A (en) Manufacture of semiconductor device
JPS5710939A (en) Manufacture of semiconductor device
JPS5586123A (en) Manufacture of semiconductor device
JPS5621336A (en) Manufacture of semiconductor device
JPS5661179A (en) Preparation of semiconductor radiation detector
JPS59112617A (ja) 半導体装置のレ−ザアニ−ル方法
JPS54140461A (en) Manufacture of semiconductor device
JPS5530806A (en) Heat treatment method of semiconductor wafer
JPS57106046A (en) Manufacture of semiconductor device
JPS57198625A (en) Manufacture of semiconductor device
JPS57113233A (en) Manufacture of semiconductor device