JPS5673447A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5673447A
JPS5673447A JP15097879A JP15097879A JPS5673447A JP S5673447 A JPS5673447 A JP S5673447A JP 15097879 A JP15097879 A JP 15097879A JP 15097879 A JP15097879 A JP 15097879A JP S5673447 A JPS5673447 A JP S5673447A
Authority
JP
Japan
Prior art keywords
layer
irradiating
laser beam
pulse width
aperture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15097879A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6360551B2 (enrdf_load_stackoverflow
Inventor
Kazuyoshi Shinada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP15097879A priority Critical patent/JPS5673447A/ja
Publication of JPS5673447A publication Critical patent/JPS5673447A/ja
Publication of JPS6360551B2 publication Critical patent/JPS6360551B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
  • Drying Of Semiconductors (AREA)
JP15097879A 1979-11-21 1979-11-21 Manufacture of semiconductor device Granted JPS5673447A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15097879A JPS5673447A (en) 1979-11-21 1979-11-21 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15097879A JPS5673447A (en) 1979-11-21 1979-11-21 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5673447A true JPS5673447A (en) 1981-06-18
JPS6360551B2 JPS6360551B2 (enrdf_load_stackoverflow) 1988-11-24

Family

ID=15508601

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15097879A Granted JPS5673447A (en) 1979-11-21 1979-11-21 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5673447A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846677A (ja) * 1981-09-11 1983-03-18 Matsushita Electric Ind Co Ltd バイポ−ラトランジスタおよびその製造方法
JPS5848440A (ja) * 1981-09-16 1983-03-22 Fujitsu Ltd 半導体装置の製造方法
JPS61242073A (ja) * 1985-04-19 1986-10-28 Fujitsu Ltd 半導体装置の製造方法
WO2023013483A1 (ja) * 2021-08-05 2023-02-09 東京エレクトロン株式会社 成膜方法及び成膜装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846677A (ja) * 1981-09-11 1983-03-18 Matsushita Electric Ind Co Ltd バイポ−ラトランジスタおよびその製造方法
JPS5848440A (ja) * 1981-09-16 1983-03-22 Fujitsu Ltd 半導体装置の製造方法
JPS61242073A (ja) * 1985-04-19 1986-10-28 Fujitsu Ltd 半導体装置の製造方法
WO2023013483A1 (ja) * 2021-08-05 2023-02-09 東京エレクトロン株式会社 成膜方法及び成膜装置

Also Published As

Publication number Publication date
JPS6360551B2 (enrdf_load_stackoverflow) 1988-11-24

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