JPS6360551B2 - - Google Patents
Info
- Publication number
- JPS6360551B2 JPS6360551B2 JP54150978A JP15097879A JPS6360551B2 JP S6360551 B2 JPS6360551 B2 JP S6360551B2 JP 54150978 A JP54150978 A JP 54150978A JP 15097879 A JP15097879 A JP 15097879A JP S6360551 B2 JPS6360551 B2 JP S6360551B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- insulating film
- single crystal
- substrate
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Local Oxidation Of Silicon (AREA)
- Bipolar Transistors (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15097879A JPS5673447A (en) | 1979-11-21 | 1979-11-21 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15097879A JPS5673447A (en) | 1979-11-21 | 1979-11-21 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5673447A JPS5673447A (en) | 1981-06-18 |
| JPS6360551B2 true JPS6360551B2 (enrdf_load_stackoverflow) | 1988-11-24 |
Family
ID=15508601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15097879A Granted JPS5673447A (en) | 1979-11-21 | 1979-11-21 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5673447A (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5846677A (ja) * | 1981-09-11 | 1983-03-18 | Matsushita Electric Ind Co Ltd | バイポ−ラトランジスタおよびその製造方法 |
| JPS5848440A (ja) * | 1981-09-16 | 1983-03-22 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS61242073A (ja) * | 1985-04-19 | 1986-10-28 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP2023023459A (ja) * | 2021-08-05 | 2023-02-16 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
-
1979
- 1979-11-21 JP JP15097879A patent/JPS5673447A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5673447A (en) | 1981-06-18 |