JPS5656641A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5656641A
JPS5656641A JP13390579A JP13390579A JPS5656641A JP S5656641 A JPS5656641 A JP S5656641A JP 13390579 A JP13390579 A JP 13390579A JP 13390579 A JP13390579 A JP 13390579A JP S5656641 A JPS5656641 A JP S5656641A
Authority
JP
Japan
Prior art keywords
film
polycrystalline
oxidized
wiring
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13390579A
Other languages
English (en)
Inventor
Hirokazu Miyoshi
Hiroji Harada
Natsuo Tsubouchi
Wataru Wakamiya
Masahiko Denda
Shinichi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13390579A priority Critical patent/JPS5656641A/ja
Publication of JPS5656641A publication Critical patent/JPS5656641A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP13390579A 1979-10-13 1979-10-13 Manufacture of semiconductor device Pending JPS5656641A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13390579A JPS5656641A (en) 1979-10-13 1979-10-13 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13390579A JPS5656641A (en) 1979-10-13 1979-10-13 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5656641A true JPS5656641A (en) 1981-05-18

Family

ID=15115834

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13390579A Pending JPS5656641A (en) 1979-10-13 1979-10-13 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5656641A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5965452A (ja) * 1982-10-05 1984-04-13 Matsushita Electronics Corp 半導体装置の製造方法
JPS59169153A (ja) * 1983-03-17 1984-09-25 Toshiba Corp 半導体装置およびその製造方法
JPS61216332A (ja) * 1985-01-04 1986-09-26 テキサス　インスツルメンツ　インコ−ポレイテツド シリコン部材を熱酸化する方法
JPH06216375A (ja) * 1993-01-14 1994-08-05 Nec Corp 半導体装置の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5965452A (ja) * 1982-10-05 1984-04-13 Matsushita Electronics Corp 半導体装置の製造方法
JPH0220147B2 (ja) * 1982-10-05 1990-05-08 Matsushita Electronics Corp
JPS59169153A (ja) * 1983-03-17 1984-09-25 Toshiba Corp 半導体装置およびその製造方法
JPS61216332A (ja) * 1985-01-04 1986-09-26 テキサス　インスツルメンツ　インコ−ポレイテツド シリコン部材を熱酸化する方法
JPH06216375A (ja) * 1993-01-14 1994-08-05 Nec Corp 半導体装置の製造方法

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