JPS6472544A - Selective oxidation and isolation - Google Patents
Selective oxidation and isolationInfo
- Publication number
- JPS6472544A JPS6472544A JP22817587A JP22817587A JPS6472544A JP S6472544 A JPS6472544 A JP S6472544A JP 22817587 A JP22817587 A JP 22817587A JP 22817587 A JP22817587 A JP 22817587A JP S6472544 A JPS6472544 A JP S6472544A
- Authority
- JP
- Japan
- Prior art keywords
- nitride film
- thickness
- oxide film
- film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To suppress the redistribution of a well region and to improve the integration of an integrated circuit by selectively forming an oxide film with an optical nitride film formed on a semiconductor substrate used as a mask, thereby forming the nitride film having a sufficient thickness at a low temperature or in a short time. CONSTITUTION:With an optical nitride film 3 formed on a semiconductor substrate as a mask an oxide film 6 is selectively formed. For example, the substrate 1 is heated by an infrared ray lamp in an ammonia gas atmosphere, thereby forming the optical nitride film 3 having 50-200Angstrom of thickness on the substrate 1, a well 2. Then, an oxide film 4 having 200-1000Angstrom of thickness is formed by a CVD method, and a nitride film 5 is further formed by a CVD method to have 200-2000Angstrom of thickness. Then, with a resist pattern so formed as to remain on an element region as a mask, the films 5, 4, 3 are etched by dry etching or the like, and the resist is removed. Thereafter, a region not masked by the film 3 on the substrate 1 is oxidized by thermally oxidizing at 1000-1100 deg.C, and a field oxide film 6 is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22817587A JPS6472544A (en) | 1987-09-11 | 1987-09-11 | Selective oxidation and isolation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22817587A JPS6472544A (en) | 1987-09-11 | 1987-09-11 | Selective oxidation and isolation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6472544A true JPS6472544A (en) | 1989-03-17 |
Family
ID=16872395
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22817587A Pending JPS6472544A (en) | 1987-09-11 | 1987-09-11 | Selective oxidation and isolation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6472544A (en) |
-
1987
- 1987-09-11 JP JP22817587A patent/JPS6472544A/en active Pending
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