JPS5650511A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5650511A JPS5650511A JP12540179A JP12540179A JPS5650511A JP S5650511 A JPS5650511 A JP S5650511A JP 12540179 A JP12540179 A JP 12540179A JP 12540179 A JP12540179 A JP 12540179A JP S5650511 A JPS5650511 A JP S5650511A
- Authority
- JP
- Japan
- Prior art keywords
- thickness
- film
- laser beam
- insulating film
- efficiency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000010979 ruby Substances 0.000 abstract 1
- 229910001750 ruby Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12540179A JPS5650511A (en) | 1979-10-01 | 1979-10-01 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12540179A JPS5650511A (en) | 1979-10-01 | 1979-10-01 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5650511A true JPS5650511A (en) | 1981-05-07 |
JPS634346B2 JPS634346B2 (ja) | 1988-01-28 |
Family
ID=14909211
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12540179A Granted JPS5650511A (en) | 1979-10-01 | 1979-10-01 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5650511A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5595484U (ja) * | 1979-12-27 | 1980-07-02 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5546503A (en) * | 1978-09-28 | 1980-04-01 | Toshiba Corp | Method of making semiconductor device |
-
1979
- 1979-10-01 JP JP12540179A patent/JPS5650511A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5546503A (en) * | 1978-09-28 | 1980-04-01 | Toshiba Corp | Method of making semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5595484U (ja) * | 1979-12-27 | 1980-07-02 |
Also Published As
Publication number | Publication date |
---|---|
JPS634346B2 (ja) | 1988-01-28 |
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