JPS57194526A - Manufacture of semiconductor substrate - Google Patents
Manufacture of semiconductor substrateInfo
- Publication number
- JPS57194526A JPS57194526A JP7941681A JP7941681A JPS57194526A JP S57194526 A JPS57194526 A JP S57194526A JP 7941681 A JP7941681 A JP 7941681A JP 7941681 A JP7941681 A JP 7941681A JP S57194526 A JPS57194526 A JP S57194526A
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor substrate
- silicon
- ion implantation
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 5
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 1
- 238000005224 laser annealing Methods 0.000 abstract 1
- 238000003754 machining Methods 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To have poly silicon grown into single crystal having a large crystal grain diameter by a method wherein an SiO2 film is provided on a semiconductor substrate, a grooved Si3N4 film is formed on the SiO2 film, and then an annealing and an ion implantation are repeatedly performed. CONSTITUTION:A silicon oxide film 2 is formed on the semiconductor substrate 1, a silicon nitride film 3 is formed on the film 2, a groove is provided on the silicon nitride film 3, poly silicon 4 is covered on the film 3, and a laser annealing and an ion implantation are performed repeatedly on the above. Through these procedures, the grooved part is hardly broken by the irradiation of a laser beam, and an excellent machining accuracy is obtained, thereby enabling to obtain the device of a high electronic mobility having a little variation in threshold voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7941681A JPS57194526A (en) | 1981-05-27 | 1981-05-27 | Manufacture of semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7941681A JPS57194526A (en) | 1981-05-27 | 1981-05-27 | Manufacture of semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57194526A true JPS57194526A (en) | 1982-11-30 |
Family
ID=13689259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7941681A Pending JPS57194526A (en) | 1981-05-27 | 1981-05-27 | Manufacture of semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57194526A (en) |
-
1981
- 1981-05-27 JP JP7941681A patent/JPS57194526A/en active Pending
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