JPS56500991A - - Google Patents

Info

Publication number
JPS56500991A
JPS56500991A JP50199280A JP50199280A JPS56500991A JP S56500991 A JPS56500991 A JP S56500991A JP 50199280 A JP50199280 A JP 50199280A JP 50199280 A JP50199280 A JP 50199280A JP S56500991 A JPS56500991 A JP S56500991A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50199280A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS56500991A publication Critical patent/JPS56500991A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/012—Manufacture or treatment of static induction transistors [SIT], e.g. permeable base transistors [PBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/164—Three dimensional processing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP50199280A 1979-08-10 1980-08-07 Pending JPS56500991A (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/065,514 US4378629A (en) 1979-08-10 1979-08-10 Semiconductor embedded layer technology including permeable base transistor, fabrication method

Publications (1)

Publication Number Publication Date
JPS56500991A true JPS56500991A (OSRAM) 1981-07-16

Family

ID=22063261

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50199280A Pending JPS56500991A (OSRAM) 1979-08-10 1980-08-07

Country Status (6)

Country Link
US (1) US4378629A (OSRAM)
EP (1) EP0034166B1 (OSRAM)
JP (1) JPS56500991A (OSRAM)
CA (1) CA1165011A (OSRAM)
DE (1) DE3071962D1 (OSRAM)
WO (1) WO1981000489A1 (OSRAM)

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JPS57173978A (en) * 1981-04-21 1982-10-26 Nippon Gakki Seizo Kk Integrated circuit device
FR2514949A1 (fr) * 1981-10-16 1983-04-22 Thomson Csf Transistor a effet de champ a canal vertical
JPS5874083A (ja) * 1981-10-28 1983-05-04 Seiko Instr & Electronics Ltd Ｍｉｓ集積回路とその製造方法
JPS5894218A (ja) * 1981-11-30 1983-06-04 Semiconductor Res Found フオトカツプラ
US4546375A (en) * 1982-06-24 1985-10-08 Rca Corporation Vertical IGFET with internal gate and method for making same
US4495511A (en) * 1982-08-23 1985-01-22 The United States Of America As Represented By The Secretary Of The Navy Permeable base transistor structure
JPS59108462A (ja) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd 静電誘導トランジスタを具える固体撮像素子
US4522661A (en) * 1983-06-24 1985-06-11 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Low defect, high purity crystalline layers grown by selective deposition
US4612072A (en) * 1983-06-24 1986-09-16 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for growing low defect, high purity crystalline layers utilizing lateral overgrowth of a patterned mask
US4507158A (en) * 1983-08-12 1985-03-26 Hewlett-Packard Co. Trench isolated transistors in semiconductor films
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US4903089A (en) * 1988-02-02 1990-02-20 Massachusetts Institute Of Technology Vertical transistor device fabricated with semiconductor regrowth
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US5002899A (en) * 1988-09-30 1991-03-26 Massachusetts Institute Of Technology Electrical contacts on diamond
WO1990007796A1 (en) * 1989-01-03 1990-07-12 Massachusetts Institute Of Technology Insulator films on diamond
US5207863A (en) * 1990-04-06 1993-05-04 Canon Kabushiki Kaisha Crystal growth method and crystalline article obtained by said method
JPH03290975A (ja) * 1990-04-09 1991-12-20 Fujitsu Ltd 縦型半導体装置
DE4019231A1 (de) * 1990-06-15 1991-12-19 Forschungszentrum Juelich Gmbh Verfahren zur herstellung eines elektronischen bauelements und elektronisches bauelement
US5371378A (en) * 1992-06-08 1994-12-06 Kobe Steel Usa, Inc. Diamond metal base/permeable base transistor and method of making same
FR2803433B1 (fr) * 1999-12-30 2003-02-14 Thomson Csf Procede de realisation d'une grille metallique enterree dans une structure en materiau semiconducteur
US6706402B2 (en) * 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6643165B2 (en) * 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
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US6911682B2 (en) 2001-12-28 2005-06-28 Nantero, Inc. Electromechanical three-trace junction devices
US6919592B2 (en) * 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US6574130B2 (en) 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US6924538B2 (en) * 2001-07-25 2005-08-02 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US7259410B2 (en) * 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US6835591B2 (en) * 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US7176505B2 (en) * 2001-12-28 2007-02-13 Nantero, Inc. Electromechanical three-trace junction devices
US6784028B2 (en) 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
US7335395B2 (en) 2002-04-23 2008-02-26 Nantero, Inc. Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US6774052B2 (en) * 2002-06-19 2004-08-10 Nantero, Inc. Method of making nanotube permeable base transistor
AU2003248713A1 (en) * 2002-06-19 2004-01-06 Nantero, Inc. Nanotube permeable base transistor and method of making same
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JPS5390774A (en) * 1977-01-19 1978-08-09 Handotai Kenkyu Shinkokai Ic
JPS5482178A (en) * 1977-12-14 1979-06-30 Semiconductor Res Found Electrostatic inductive intergrated circuit device

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Patent Citations (3)

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JPS5074384A (OSRAM) * 1973-11-01 1975-06-19
JPS5390774A (en) * 1977-01-19 1978-08-09 Handotai Kenkyu Shinkokai Ic
JPS5482178A (en) * 1977-12-14 1979-06-30 Semiconductor Res Found Electrostatic inductive intergrated circuit device

Also Published As

Publication number Publication date
WO1981000489A1 (en) 1981-02-19
EP0034166B1 (en) 1987-04-29
EP0034166A4 (en) 1984-04-27
US4378629A (en) 1983-04-05
DE3071962D1 (en) 1987-06-04
EP0034166A1 (en) 1981-08-26
CA1165011A (en) 1984-04-03

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