CH436492A - Steuerbare Halbleitervorrichtung mit mehreren Schichten - Google Patents

Steuerbare Halbleitervorrichtung mit mehreren Schichten

Info

Publication number
CH436492A
CH436492A CH1455465A CH1455465A CH436492A CH 436492 A CH436492 A CH 436492A CH 1455465 A CH1455465 A CH 1455465A CH 1455465 A CH1455465 A CH 1455465A CH 436492 A CH436492 A CH 436492A
Authority
CH
Switzerland
Prior art keywords
semiconductor device
layer semiconductor
controllable multi
controllable
layer
Prior art date
Application number
CH1455465A
Other languages
English (en)
Inventor
Werner Dipl Ing Faust
Original Assignee
Bbc Brown Boveri & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bbc Brown Boveri & Cie filed Critical Bbc Brown Boveri & Cie
Priority to CH1455465A priority Critical patent/CH436492A/de
Priority to DE19651489667 priority patent/DE1489667A1/de
Priority to FR80520A priority patent/FR1499519A/fr
Priority to GB46740/66A priority patent/GB1156997A/en
Publication of CH436492A publication Critical patent/CH436492A/de
Priority to US860844A priority patent/US3571675A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/139—Schottky barrier
CH1455465A 1965-10-21 1965-10-21 Steuerbare Halbleitervorrichtung mit mehreren Schichten CH436492A (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CH1455465A CH436492A (de) 1965-10-21 1965-10-21 Steuerbare Halbleitervorrichtung mit mehreren Schichten
DE19651489667 DE1489667A1 (de) 1965-10-21 1965-11-08 Steuerbares Halbleiterventil mit mehreren Schichten
FR80520A FR1499519A (fr) 1965-10-21 1966-10-19 Soupapes à semi-conducteur commandées avec plusieurs couches
GB46740/66A GB1156997A (en) 1965-10-21 1966-10-19 Improvements in and relating to Controllable Semi-Conductor Devices
US860844A US3571675A (en) 1965-10-21 1969-09-24 Controlled semi-conductor wafer having adjacent layers of different doping concentrations and charged insert grid

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1455465A CH436492A (de) 1965-10-21 1965-10-21 Steuerbare Halbleitervorrichtung mit mehreren Schichten

Publications (1)

Publication Number Publication Date
CH436492A true CH436492A (de) 1967-05-31

Family

ID=4401779

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1455465A CH436492A (de) 1965-10-21 1965-10-21 Steuerbare Halbleitervorrichtung mit mehreren Schichten

Country Status (5)

Country Link
US (1) US3571675A (de)
CH (1) CH436492A (de)
DE (1) DE1489667A1 (de)
FR (1) FR1499519A (de)
GB (1) GB1156997A (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4060821A (en) * 1976-06-21 1977-11-29 General Electric Co. Field controlled thyristor with buried grid
EP0034166A1 (de) * 1979-08-10 1981-08-26 Massachusetts Inst Technology Eingebettete schichtentechnologie für halbleiter.
FR2514949A1 (fr) * 1981-10-16 1983-04-22 Thomson Csf Transistor a effet de champ a canal vertical

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5510984B2 (de) * 1972-11-29 1980-03-21
JPS54757B2 (de) * 1973-03-23 1979-01-16
JPS5250176A (en) * 1975-10-20 1977-04-21 Semiconductor Res Found Electrostatic induction type thyristor
JPS5250175A (en) * 1975-10-20 1977-04-21 Semiconductor Res Found Electrostatic induction type thyristor
US4086611A (en) * 1975-10-20 1978-04-25 Semiconductor Research Foundation Static induction type thyristor
US4132996A (en) * 1976-11-08 1979-01-02 General Electric Company Electric field-controlled semiconductor device
DE2926741C2 (de) * 1979-07-03 1982-09-09 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Feldeffekt-Transistor und Verfahren zu seiner Herstellung
US5298787A (en) * 1979-08-10 1994-03-29 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor
US5032538A (en) * 1979-08-10 1991-07-16 Massachusetts Institute Of Technology Semiconductor embedded layer technology utilizing selective epitaxial growth methods
JPS5917547B2 (ja) * 1981-09-05 1984-04-21 財団法人半導体研究振興会 サイリスタ
JPS61198779A (ja) * 1985-02-28 1986-09-03 Res Dev Corp Of Japan 両面ゲ−ト静電誘導サイリスタ及びその製造方法
US4700460A (en) * 1986-05-30 1987-10-20 Rca Corporation Method for fabricating bidirectional vertical power MOS device
US4641164A (en) * 1986-05-30 1987-02-03 Rca Corporation Bidirectional vertical power MOS device and fabrication method
SE9704149D0 (sv) * 1997-11-13 1997-11-13 Abb Research Ltd A semiconductor device of SiC and a transistor of SiC having an insulated gate
JP2002530869A (ja) * 1998-11-18 2002-09-17 インフィネオン テクノロジース アクチエンゲゼルシャフト 誘電性または半絶縁性シールド構造体を有する半導体構成素子
EP1005092A1 (de) * 1998-11-26 2000-05-31 STMicroelectronics S.r.l. PN-übergangstruktur für hohe Durchbruchspannungen und diesbezügliches Herstellungsverfahren
US20110284949A1 (en) * 2010-05-24 2011-11-24 National Chiao Tung University Vertical transistor and a method of fabricating the same
US20150318346A1 (en) * 2011-11-30 2015-11-05 Xingbi Chen Semiconductor device with voltage-sustaining region constructed by semiconductor and insulator containing conductive regions
JP6414159B2 (ja) * 2016-07-29 2018-10-31 トヨタ自動車株式会社 半導体装置およびその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1079204A (en) * 1963-12-24 1967-08-16 Hughes Aircraft Co Improvements in and relating to thin film electrical devices
US3484662A (en) * 1965-01-15 1969-12-16 North American Rockwell Thin film transistor on an insulating substrate

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4060821A (en) * 1976-06-21 1977-11-29 General Electric Co. Field controlled thyristor with buried grid
EP0034166A1 (de) * 1979-08-10 1981-08-26 Massachusetts Inst Technology Eingebettete schichtentechnologie für halbleiter.
EP0034166A4 (de) * 1979-08-10 1984-04-27 Massachusetts Inst Technology Eingebettete schichtentechnologie für halbleiter.
FR2514949A1 (fr) * 1981-10-16 1983-04-22 Thomson Csf Transistor a effet de champ a canal vertical
EP0077706A1 (de) * 1981-10-16 1983-04-27 Thomson-Csf Feldeffekttransistor mit vertikalem Kanal

Also Published As

Publication number Publication date
DE1489667A1 (de) 1969-10-02
FR1499519A (fr) 1967-10-27
GB1156997A (en) 1969-07-02
US3571675A (en) 1971-03-23

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