GB948239A - Method of embedding a metallic grid in a body of semiconductive material - Google Patents

Method of embedding a metallic grid in a body of semiconductive material

Info

Publication number
GB948239A
GB948239A GB1874162A GB1874162A GB948239A GB 948239 A GB948239 A GB 948239A GB 1874162 A GB1874162 A GB 1874162A GB 1874162 A GB1874162 A GB 1874162A GB 948239 A GB948239 A GB 948239A
Authority
GB
United Kingdom
Prior art keywords
grid
semi
layer
conductive material
semiconductive material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1874162A
Inventor
William Shockley
Richard Evert Ewing
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Clevite Corp
Original Assignee
Clevite Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clevite Corp filed Critical Clevite Corp
Priority to GB1874162A priority Critical patent/GB948239A/en
Priority to FR899022A priority patent/FR1324048A/en
Publication of GB948239A publication Critical patent/GB948239A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor

Abstract

948,239. Semi-conductor devices. CLEVITE CORPORATION. May 15, 1962, No. 18741/62. Drawings to Specification. Heading H1K. A metallic grid is embedded within a layer of semi-conductive material by applying the grid to one surface of a wafer of semi-conductive material and subsequently epitaxially growing a layer of semi-conductive material on the surface to embed the grid in the epitaxially grown layer. The grid may contain impurities which diffuse outwardly so that the grid is surrounded by a region having a higher impurity concentration than the surrounding portion of semiconductive material. The invention is particularly directed to reducing the base spreading resistance in transistors and in four-layer switching devices.
GB1874162A 1962-05-15 1962-05-15 Method of embedding a metallic grid in a body of semiconductive material Expired GB948239A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB1874162A GB948239A (en) 1962-05-15 1962-05-15 Method of embedding a metallic grid in a body of semiconductive material
FR899022A FR1324048A (en) 1962-05-15 1962-05-28 Method of embedding a metal grid in a body of semiconductor material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1874162A GB948239A (en) 1962-05-15 1962-05-15 Method of embedding a metallic grid in a body of semiconductive material

Publications (1)

Publication Number Publication Date
GB948239A true GB948239A (en) 1964-01-29

Family

ID=10117605

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1874162A Expired GB948239A (en) 1962-05-15 1962-05-15 Method of embedding a metallic grid in a body of semiconductive material

Country Status (1)

Country Link
GB (1) GB948239A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3409812A (en) * 1965-11-12 1968-11-05 Hughes Aircraft Co Space-charge-limited current triode device
US3465216A (en) * 1966-07-22 1969-09-02 Stanislas Teszner Bistable semiconductor device for heavy currents
US4378629A (en) * 1979-08-10 1983-04-05 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor, fabrication method
US5032538A (en) * 1979-08-10 1991-07-16 Massachusetts Institute Of Technology Semiconductor embedded layer technology utilizing selective epitaxial growth methods
US5298787A (en) * 1979-08-10 1994-03-29 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3409812A (en) * 1965-11-12 1968-11-05 Hughes Aircraft Co Space-charge-limited current triode device
US3465216A (en) * 1966-07-22 1969-09-02 Stanislas Teszner Bistable semiconductor device for heavy currents
US4378629A (en) * 1979-08-10 1983-04-05 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor, fabrication method
US5032538A (en) * 1979-08-10 1991-07-16 Massachusetts Institute Of Technology Semiconductor embedded layer technology utilizing selective epitaxial growth methods
US5298787A (en) * 1979-08-10 1994-03-29 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor

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