JPS5074384A - - Google Patents
Info
- Publication number
- JPS5074384A JPS5074384A JP12382473A JP12382473A JPS5074384A JP S5074384 A JPS5074384 A JP S5074384A JP 12382473 A JP12382473 A JP 12382473A JP 12382473 A JP12382473 A JP 12382473A JP S5074384 A JPS5074384 A JP S5074384A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12382473A JPS5412195B2 (OSRAM) | 1973-11-01 | 1973-11-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12382473A JPS5412195B2 (OSRAM) | 1973-11-01 | 1973-11-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5074384A true JPS5074384A (OSRAM) | 1975-06-19 |
| JPS5412195B2 JPS5412195B2 (OSRAM) | 1979-05-21 |
Family
ID=14870256
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12382473A Expired JPS5412195B2 (OSRAM) | 1973-11-01 | 1973-11-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5412195B2 (OSRAM) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS524753U (OSRAM) * | 1975-06-24 | 1977-01-13 | ||
| JPS56500991A (OSRAM) * | 1979-08-10 | 1981-07-16 | ||
| JPS587879A (ja) * | 1981-07-06 | 1983-01-17 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果トランジスタ及びその製法 |
| US5032538A (en) * | 1979-08-10 | 1991-07-16 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology utilizing selective epitaxial growth methods |
| US5298787A (en) * | 1979-08-10 | 1994-03-29 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor |
-
1973
- 1973-11-01 JP JP12382473A patent/JPS5412195B2/ja not_active Expired
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS524753U (OSRAM) * | 1975-06-24 | 1977-01-13 | ||
| JPS56500991A (OSRAM) * | 1979-08-10 | 1981-07-16 | ||
| US5032538A (en) * | 1979-08-10 | 1991-07-16 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology utilizing selective epitaxial growth methods |
| US5298787A (en) * | 1979-08-10 | 1994-03-29 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor |
| JPS587879A (ja) * | 1981-07-06 | 1983-01-17 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果トランジスタ及びその製法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5412195B2 (OSRAM) | 1979-05-21 |