JPS56500991A - - Google Patents
Info
- Publication number
- JPS56500991A JPS56500991A JP50199280A JP50199280A JPS56500991A JP S56500991 A JPS56500991 A JP S56500991A JP 50199280 A JP50199280 A JP 50199280A JP 50199280 A JP50199280 A JP 50199280A JP S56500991 A JPS56500991 A JP S56500991A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66416—Static induction transistors [SIT]
- H01L29/66424—Permeable base transistors [PBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/164—Three dimensional processing
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/065,514 US4378629A (en) | 1979-08-10 | 1979-08-10 | Semiconductor embedded layer technology including permeable base transistor, fabrication method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56500991A true JPS56500991A (ja) | 1981-07-16 |
Family
ID=22063261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50199280A Pending JPS56500991A (ja) | 1979-08-10 | 1980-08-07 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4378629A (ja) |
| EP (1) | EP0034166B1 (ja) |
| JP (1) | JPS56500991A (ja) |
| CA (1) | CA1165011A (ja) |
| DE (1) | DE3071962D1 (ja) |
| WO (1) | WO1981000489A1 (ja) |
Families Citing this family (59)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5515275A (en) * | 1978-07-19 | 1980-02-02 | Semiconductor Res Found | Charge transfer device |
| US4409725A (en) * | 1980-10-16 | 1983-10-18 | Nippon Gakki Seizo Kabushiki Kaisha | Method of making semiconductor integrated circuit |
| JPS57173978A (en) * | 1981-04-21 | 1982-10-26 | Nippon Gakki Seizo Kk | Integrated circuit device |
| FR2514949A1 (fr) * | 1981-10-16 | 1983-04-22 | Thomson Csf | Transistor a effet de champ a canal vertical |
| JPS5874083A (ja) * | 1981-10-28 | 1983-05-04 | Seiko Instr & Electronics Ltd | Ｍｉｓ集積回路とその製造方法 |
| JPS5894218A (ja) * | 1981-11-30 | 1983-06-04 | Semiconductor Res Found | フオトカツプラ |
| US4546375A (en) * | 1982-06-24 | 1985-10-08 | Rca Corporation | Vertical IGFET with internal gate and method for making same |
| US4495511A (en) * | 1982-08-23 | 1985-01-22 | The United States Of America As Represented By The Secretary Of The Navy | Permeable base transistor structure |
| JPS59108462A (ja) * | 1982-12-14 | 1984-06-22 | Olympus Optical Co Ltd | 静電誘導トランジスタを具える固体撮像素子 |
| US4612072A (en) * | 1983-06-24 | 1986-09-16 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method for growing low defect, high purity crystalline layers utilizing lateral overgrowth of a patterned mask |
| US4522661A (en) * | 1983-06-24 | 1985-06-11 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Low defect, high purity crystalline layers grown by selective deposition |
| US4507158A (en) * | 1983-08-12 | 1985-03-26 | Hewlett-Packard Co. | Trench isolated transistors in semiconductor films |
| DE3345212A1 (de) * | 1983-12-14 | 1985-06-27 | Telefunken electronic GmbH, 7100 Heilbronn | Unipolartransistor |
| JPH0779159B2 (ja) * | 1984-03-22 | 1995-08-23 | 潤一 西澤 | 光トリガ・光クエンチ可能なサイリスタ装置 |
| JPS61121369A (ja) * | 1984-11-19 | 1986-06-09 | Fujitsu Ltd | 半導体装置 |
| US4901121A (en) * | 1985-03-29 | 1990-02-13 | American Telephone & Telegraph Co., At&T Bell Labs. | Semiconductor device comprising a perforated metal silicide layer |
| US4785340A (en) * | 1985-03-29 | 1988-11-15 | Director-General Of The Agency Of Industrial Science And Technology | Semiconductor device having doping multilayer structure |
| US4651407A (en) * | 1985-05-08 | 1987-03-24 | Gte Laboratories Incorporated | Method of fabricating a junction field effect transistor utilizing epitaxial overgrowth and vertical junction formation |
| US4735918A (en) * | 1985-05-24 | 1988-04-05 | Hughes Aircraft Company | Vertical channel field effect transistor |
| US4677451A (en) * | 1985-05-24 | 1987-06-30 | Hughes Aircraft Company | Vertical channel field effect transistor |
| US4758534A (en) * | 1985-11-13 | 1988-07-19 | Bell Communications Research, Inc. | Process for producing porous refractory metal layers embedded in semiconductor devices |
| US4641164A (en) * | 1986-05-30 | 1987-02-03 | Rca Corporation | Bidirectional vertical power MOS device and fabrication method |
| US4700460A (en) * | 1986-05-30 | 1987-10-20 | Rca Corporation | Method for fabricating bidirectional vertical power MOS device |
| US5016074A (en) * | 1987-10-20 | 1991-05-14 | Bell Communications Research, Inc. | Epitaxial intermetallic contact for compound semiconductors |
| US5155561A (en) * | 1988-01-05 | 1992-10-13 | Massachusetts Institute Of Technology | Permeable base transistor having an electrode configuration for heat dissipation |
| US4903089A (en) * | 1988-02-02 | 1990-02-20 | Massachusetts Institute Of Technology | Vertical transistor device fabricated with semiconductor regrowth |
| US5106778A (en) * | 1988-02-02 | 1992-04-21 | Massachusetts Institute Of Technology | Vertical transistor device fabricated with semiconductor regrowth |
| WO1989011897A1 (en) * | 1988-06-03 | 1989-12-14 | Massachusetts Institute Of Technology | Silicon dioxide films on diamond |
| GB8814365D0 (en) * | 1988-06-16 | 1988-07-20 | Marconi Gec Ltd | Optical devices |
| US4904980A (en) * | 1988-08-19 | 1990-02-27 | Westinghouse Electric Corp. | Refractory resistors with etch stop for superconductor integrated circuits |
| US5002899A (en) * | 1988-09-30 | 1991-03-26 | Massachusetts Institute Of Technology | Electrical contacts on diamond |
| WO1990007796A1 (en) * | 1989-01-03 | 1990-07-12 | Massachusetts Institute Of Technology | Insulator films on diamond |
| US5207863A (en) * | 1990-04-06 | 1993-05-04 | Canon Kabushiki Kaisha | Crystal growth method and crystalline article obtained by said method |
| JPH03290975A (ja) * | 1990-04-09 | 1991-12-20 | Fujitsu Ltd | 縦型半導体装置 |
| DE4019231A1 (de) * | 1990-06-15 | 1991-12-19 | Forschungszentrum Juelich Gmbh | Verfahren zur herstellung eines elektronischen bauelements und elektronisches bauelement |
| US5371378A (en) * | 1992-06-08 | 1994-12-06 | Kobe Steel Usa, Inc. | Diamond metal base/permeable base transistor and method of making same |
| FR2803433B1 (fr) * | 1999-12-30 | 2003-02-14 | Thomson Csf | Procede de realisation d'une grille metallique enterree dans une structure en materiau semiconducteur |
| US7259410B2 (en) * | 2001-07-25 | 2007-08-21 | Nantero, Inc. | Devices having horizontally-disposed nanofabric articles and methods of making the same |
| US6919592B2 (en) * | 2001-07-25 | 2005-07-19 | Nantero, Inc. | Electromechanical memory array using nanotube ribbons and method for making same |
| US6911682B2 (en) | 2001-12-28 | 2005-06-28 | Nantero, Inc. | Electromechanical three-trace junction devices |
| US6835591B2 (en) * | 2001-07-25 | 2004-12-28 | Nantero, Inc. | Methods of nanotube films and articles |
| US6574130B2 (en) * | 2001-07-25 | 2003-06-03 | Nantero, Inc. | Hybrid circuit having nanotube electromechanical memory |
| US6924538B2 (en) * | 2001-07-25 | 2005-08-02 | Nantero, Inc. | Devices having vertically-disposed nanofabric articles and methods of making the same |
| US6643165B2 (en) | 2001-07-25 | 2003-11-04 | Nantero, Inc. | Electromechanical memory having cell selection circuitry constructed with nanotube technology |
| US7566478B2 (en) * | 2001-07-25 | 2009-07-28 | Nantero, Inc. | Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles |
| US6706402B2 (en) | 2001-07-25 | 2004-03-16 | Nantero, Inc. | Nanotube films and articles |
| US7176505B2 (en) | 2001-12-28 | 2007-02-13 | Nantero, Inc. | Electromechanical three-trace junction devices |
| US6784028B2 (en) | 2001-12-28 | 2004-08-31 | Nantero, Inc. | Methods of making electromechanical three-trace junction devices |
| US7335395B2 (en) | 2002-04-23 | 2008-02-26 | Nantero, Inc. | Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles |
| US6759693B2 (en) | 2002-06-19 | 2004-07-06 | Nantero, Inc. | Nanotube permeable base transistor |
| US6774052B2 (en) * | 2002-06-19 | 2004-08-10 | Nantero, Inc. | Method of making nanotube permeable base transistor |
| EP1537605A4 (en) * | 2002-06-19 | 2008-03-05 | Nantero Inc | PERFORMABLE NANOTUBE-BASED TRANSISTOR AND METHODS OF PRODUCTION THEREOF |
| US7162909B2 (en) * | 2002-08-28 | 2007-01-16 | Daniels Manufacturing Corporation | Crimp tool for crimping pin and socket contacts |
| US7560136B2 (en) * | 2003-01-13 | 2009-07-14 | Nantero, Inc. | Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles |
| US6800496B1 (en) * | 2003-08-20 | 2004-10-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Characterization methodology for the thin gate oxide device |
| JP4791023B2 (ja) * | 2004-11-08 | 2011-10-12 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Ｔｆｔの検査装置および検査方法 |
| US7528065B2 (en) * | 2006-01-17 | 2009-05-05 | International Business Machines Corporation | Structure and method for MOSFET gate electrode landing pad |
| ZA200806479B (en) * | 2007-07-20 | 2009-04-29 | Gallium Entpr Pty Ltd | Buried contact devices for nitride-based films and manufacture thereof |
| TWI566446B (zh) | 2013-11-20 | 2017-01-11 | 財團法人工業技術研究院 | 表面彈性波產生裝置、收發裝置及其產生方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5074384A (ja) * | 1973-11-01 | 1975-06-19 | ||
| JPS5390774A (en) * | 1977-01-19 | 1978-08-09 | Handotai Kenkyu Shinkokai | Ic |
| JPS5482178A (en) * | 1977-12-14 | 1979-06-30 | Semiconductor Res Found | Electrostatic inductive intergrated circuit device |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2524033A (en) * | 1948-02-26 | 1950-10-03 | Bell Telephone Labor Inc | Three-electrode circuit element utilizing semiconductive materials |
| US2569347A (en) * | 1948-06-26 | 1951-09-25 | Bell Telephone Labor Inc | Circuit element utilizing semiconductive material |
| US2820154A (en) * | 1954-11-15 | 1958-01-14 | Rca Corp | Semiconductor devices |
| BE603293A (ja) * | 1960-05-02 | |||
| NL283434A (ja) * | 1961-09-25 | |||
| FR1317256A (fr) * | 1961-12-16 | 1963-02-08 | Teszner Stanislas | Perfectionnements aux dispositifs semi-conducteurs dits tecnetrons multibâtonnets |
| US3250967A (en) * | 1961-12-22 | 1966-05-10 | Rca Corp | Solid state triode |
| GB948239A (en) * | 1962-05-15 | 1964-01-29 | Clevite Corp | Method of embedding a metallic grid in a body of semiconductive material |
| US3372069A (en) * | 1963-10-22 | 1968-03-05 | Texas Instruments Inc | Method for depositing a single crystal on an amorphous film, method for manufacturing a metal base transistor, and a thin-film, metal base transistor |
| US3386864A (en) * | 1963-12-09 | 1968-06-04 | Ibm | Semiconductor-metal-semiconductor structure |
| US3381189A (en) * | 1964-08-18 | 1968-04-30 | Hughes Aircraft Co | Mesa multi-channel field-effect triode |
| US3375418A (en) * | 1964-09-15 | 1968-03-26 | Sprague Electric Co | S-m-s device with partial semiconducting layers |
| US3394289A (en) * | 1965-05-26 | 1968-07-23 | Sprague Electric Co | Small junction area s-m-s transistor |
| CH436492A (de) * | 1965-10-21 | 1967-05-31 | Bbc Brown Boveri & Cie | Steuerbare Halbleitervorrichtung mit mehreren Schichten |
| US3425879A (en) * | 1965-10-24 | 1969-02-04 | Texas Instruments Inc | Method of making shaped epitaxial deposits |
| US3322581A (en) * | 1965-10-24 | 1967-05-30 | Texas Instruments Inc | Fabrication of a metal base transistor |
| US3401449A (en) * | 1965-10-24 | 1968-09-17 | Texas Instruments Inc | Method of fabricating a metal base transistor |
| US3497777A (en) * | 1967-06-13 | 1970-02-24 | Stanislas Teszner | Multichannel field-effect semi-conductor device |
| US3597270A (en) * | 1968-08-15 | 1971-08-03 | Trw Inc | Inverted solid state diode |
| US3582410A (en) * | 1969-07-11 | 1971-06-01 | North American Rockwell | Process for producing metal base semiconductor devices |
| US3676732A (en) * | 1969-09-08 | 1972-07-11 | Columbia Broadcasting Syst Inc | Photo-electronic imaging apparatus |
| US3614560A (en) * | 1969-12-30 | 1971-10-19 | Ibm | Improved surface barrier transistor |
| BE791929A (fr) * | 1971-12-02 | 1973-03-16 | Western Electric Co | Procede de fabrication de regions isolantes dans un corps de semi-conducteur |
| US3751723A (en) * | 1972-03-01 | 1973-08-07 | Sprague Electric Co | Hot carrier metal base transistor having a p-type emitter and an n-type collector |
| US3860946A (en) * | 1972-10-13 | 1975-01-14 | California Inst Of Techn | Space-charge-limited solid-state triode |
| US3929527A (en) * | 1974-06-11 | 1975-12-30 | Us Army | Molecular beam epitaxy of alternating metal-semiconductor films |
| US4059461A (en) * | 1975-12-10 | 1977-11-22 | Massachusetts Institute Of Technology | Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof |
| US3999281A (en) * | 1976-01-16 | 1976-12-28 | The United States Of America As Represented By The Secretary Of The Air Force | Method for fabricating a gridded Schottky barrier field effect transistor |
| DE2703877C2 (de) * | 1977-01-31 | 1982-06-03 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | MIS-Transistor von kurzer Kanallänge und Verfahren zu seiner Herstellung |
| US4170019A (en) * | 1977-08-05 | 1979-10-02 | General Electric Company | Semiconductor device with variable grid openings for controlling turn-off pattern |
| US4127861A (en) * | 1977-09-26 | 1978-11-28 | International Business Machines Corporation | Metal base transistor with thin film amorphous semiconductors |
-
1979
- 1979-08-10 US US06/065,514 patent/US4378629A/en not_active Expired - Lifetime
-
1980
- 1980-08-06 CA CA000357666A patent/CA1165011A/en not_active Expired
- 1980-08-07 JP JP50199280A patent/JPS56500991A/ja active Pending
- 1980-08-07 DE DE8080901688T patent/DE3071962D1/de not_active Expired
- 1980-08-07 WO PCT/US1980/000997 patent/WO1981000489A1/en active IP Right Grant
-
1981
- 1981-02-24 EP EP80901688A patent/EP0034166B1/en not_active Expired
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5074384A (ja) * | 1973-11-01 | 1975-06-19 | ||
| JPS5390774A (en) * | 1977-01-19 | 1978-08-09 | Handotai Kenkyu Shinkokai | Ic |
| JPS5482178A (en) * | 1977-12-14 | 1979-06-30 | Semiconductor Res Found | Electrostatic inductive intergrated circuit device |
Also Published As
| Publication number | Publication date |
|---|---|
| US4378629A (en) | 1983-04-05 |
| EP0034166B1 (en) | 1987-04-29 |
| DE3071962D1 (en) | 1987-06-04 |
| WO1981000489A1 (en) | 1981-02-19 |
| CA1165011A (en) | 1984-04-03 |
| EP0034166A4 (en) | 1984-04-27 |
| EP0034166A1 (en) | 1981-08-26 |