JPS5635484A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS5635484A
JPS5635484A JP11058679A JP11058679A JPS5635484A JP S5635484 A JPS5635484 A JP S5635484A JP 11058679 A JP11058679 A JP 11058679A JP 11058679 A JP11058679 A JP 11058679A JP S5635484 A JPS5635484 A JP S5635484A
Authority
JP
Japan
Prior art keywords
layer
light
type
periphery
oscillation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11058679A
Other languages
English (en)
Japanese (ja)
Other versions
JPS621277B2 (enrdf_load_stackoverflow
Inventor
Isamu Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11058679A priority Critical patent/JPS5635484A/ja
Publication of JPS5635484A publication Critical patent/JPS5635484A/ja
Publication of JPS621277B2 publication Critical patent/JPS621277B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP11058679A 1979-08-29 1979-08-29 Semiconductor laser Granted JPS5635484A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11058679A JPS5635484A (en) 1979-08-29 1979-08-29 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11058679A JPS5635484A (en) 1979-08-29 1979-08-29 Semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5635484A true JPS5635484A (en) 1981-04-08
JPS621277B2 JPS621277B2 (enrdf_load_stackoverflow) 1987-01-12

Family

ID=14539597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11058679A Granted JPS5635484A (en) 1979-08-29 1979-08-29 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5635484A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5871684A (ja) * 1981-10-23 1983-04-28 Fujitsu Ltd 半導体発光装置
JPS5873176A (ja) * 1981-10-27 1983-05-02 Agency Of Ind Science & Technol 半導体レ−ザ
JPS6017977A (ja) * 1983-07-11 1985-01-29 Nec Corp 半導体レ−ザダイオ−ド

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3998234B1 (en) 2019-07-08 2024-05-08 Sumitomo Metal Mining Co., Ltd. Positive electrode active material for lithium ion secondary battery and lithium ion secondary battery

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5871684A (ja) * 1981-10-23 1983-04-28 Fujitsu Ltd 半導体発光装置
JPS5873176A (ja) * 1981-10-27 1983-05-02 Agency Of Ind Science & Technol 半導体レ−ザ
JPS6017977A (ja) * 1983-07-11 1985-01-29 Nec Corp 半導体レ−ザダイオ−ド

Also Published As

Publication number Publication date
JPS621277B2 (enrdf_load_stackoverflow) 1987-01-12

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