JPS5635484A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS5635484A JPS5635484A JP11058679A JP11058679A JPS5635484A JP S5635484 A JPS5635484 A JP S5635484A JP 11058679 A JP11058679 A JP 11058679A JP 11058679 A JP11058679 A JP 11058679A JP S5635484 A JPS5635484 A JP S5635484A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light
- type
- periphery
- oscillation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11058679A JPS5635484A (en) | 1979-08-29 | 1979-08-29 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11058679A JPS5635484A (en) | 1979-08-29 | 1979-08-29 | Semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5635484A true JPS5635484A (en) | 1981-04-08 |
| JPS621277B2 JPS621277B2 (cs) | 1987-01-12 |
Family
ID=14539597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11058679A Granted JPS5635484A (en) | 1979-08-29 | 1979-08-29 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5635484A (cs) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5871684A (ja) * | 1981-10-23 | 1983-04-28 | Fujitsu Ltd | 半導体発光装置 |
| JPS5873176A (ja) * | 1981-10-27 | 1983-05-02 | Agency Of Ind Science & Technol | 半導体レ−ザ |
| JPS6017977A (ja) * | 1983-07-11 | 1985-01-29 | Nec Corp | 半導体レ−ザダイオ−ド |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021006124A1 (ja) | 2019-07-08 | 2021-01-14 | 住友金属鉱山株式会社 | リチウムイオン二次電池用正極活物質およびリチウムイオン二次電池 |
-
1979
- 1979-08-29 JP JP11058679A patent/JPS5635484A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5871684A (ja) * | 1981-10-23 | 1983-04-28 | Fujitsu Ltd | 半導体発光装置 |
| JPS5873176A (ja) * | 1981-10-27 | 1983-05-02 | Agency Of Ind Science & Technol | 半導体レ−ザ |
| JPS6017977A (ja) * | 1983-07-11 | 1985-01-29 | Nec Corp | 半導体レ−ザダイオ−ド |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS621277B2 (cs) | 1987-01-12 |
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