JPS5623739A - Manufactue of semiconductor element having buried layer - Google Patents

Manufactue of semiconductor element having buried layer

Info

Publication number
JPS5623739A
JPS5623739A JP9913579A JP9913579A JPS5623739A JP S5623739 A JPS5623739 A JP S5623739A JP 9913579 A JP9913579 A JP 9913579A JP 9913579 A JP9913579 A JP 9913579A JP S5623739 A JPS5623739 A JP S5623739A
Authority
JP
Japan
Prior art keywords
type
layer
density
plane
compensating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9913579A
Other languages
English (en)
Japanese (ja)
Other versions
JPS576685B2 (index.php
Inventor
Tomio Kazono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Original Assignee
Tohoku Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku Metal Industries Ltd filed Critical Tohoku Metal Industries Ltd
Priority to JP9913579A priority Critical patent/JPS5623739A/ja
Publication of JPS5623739A publication Critical patent/JPS5623739A/ja
Publication of JPS576685B2 publication Critical patent/JPS576685B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/2905—
    • H10P14/24—
    • H10P14/3411—
    • H10P14/3442—

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP9913579A 1979-08-04 1979-08-04 Manufactue of semiconductor element having buried layer Granted JPS5623739A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9913579A JPS5623739A (en) 1979-08-04 1979-08-04 Manufactue of semiconductor element having buried layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9913579A JPS5623739A (en) 1979-08-04 1979-08-04 Manufactue of semiconductor element having buried layer

Publications (2)

Publication Number Publication Date
JPS5623739A true JPS5623739A (en) 1981-03-06
JPS576685B2 JPS576685B2 (index.php) 1982-02-06

Family

ID=14239278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9913579A Granted JPS5623739A (en) 1979-08-04 1979-08-04 Manufactue of semiconductor element having buried layer

Country Status (1)

Country Link
JP (1) JPS5623739A (index.php)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6216578A (ja) * 1985-07-15 1987-01-24 Toyo Electric Mfg Co Ltd 埋め込み層を有する半導体素子基板の製造方法
JPH03161248A (ja) * 1989-11-15 1991-07-11 Okuma Mach Works Ltd Ｎｃ旋盤用刃物台の割出し制御装置
WO2002079551A1 (en) * 2001-03-30 2002-10-10 Koninklijke Philips Electronics N.V. Suppression of n-type autodoping in low-temperature si and sige epitaxy

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660180A (en) * 1969-02-27 1972-05-02 Ibm Constrainment of autodoping in epitaxial deposition
US3669769A (en) * 1970-09-29 1972-06-13 Ibm Method for minimizing autodoping in epitaxial deposition
US3847686A (en) * 1970-05-27 1974-11-12 Gen Electric Method of forming silicon epitaxial layers
JPS53135571A (en) * 1977-05-02 1978-11-27 Hitachi Ltd Vapor phase growth method for semiconductor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660180A (en) * 1969-02-27 1972-05-02 Ibm Constrainment of autodoping in epitaxial deposition
US3847686A (en) * 1970-05-27 1974-11-12 Gen Electric Method of forming silicon epitaxial layers
US3669769A (en) * 1970-09-29 1972-06-13 Ibm Method for minimizing autodoping in epitaxial deposition
JPS53135571A (en) * 1977-05-02 1978-11-27 Hitachi Ltd Vapor phase growth method for semiconductor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6216578A (ja) * 1985-07-15 1987-01-24 Toyo Electric Mfg Co Ltd 埋め込み層を有する半導体素子基板の製造方法
JPH03161248A (ja) * 1989-11-15 1991-07-11 Okuma Mach Works Ltd Ｎｃ旋盤用刃物台の割出し制御装置
WO2002079551A1 (en) * 2001-03-30 2002-10-10 Koninklijke Philips Electronics N.V. Suppression of n-type autodoping in low-temperature si and sige epitaxy
US6838359B2 (en) 2001-03-30 2005-01-04 Koninklijke Philips Electronics N.V. Suppression of n-type autodoping in low-temperature Si and SiGe epitaxy

Also Published As

Publication number Publication date
JPS576685B2 (index.php) 1982-02-06

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