JPS576685B2 - - Google Patents
Info
- Publication number
- JPS576685B2 JPS576685B2 JP9913579A JP9913579A JPS576685B2 JP S576685 B2 JPS576685 B2 JP S576685B2 JP 9913579 A JP9913579 A JP 9913579A JP 9913579 A JP9913579 A JP 9913579A JP S576685 B2 JPS576685 B2 JP S576685B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H10P14/2905—
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- H10P14/24—
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- H10P14/3411—
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- H10P14/3442—
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9913579A JPS5623739A (en) | 1979-08-04 | 1979-08-04 | Manufactue of semiconductor element having buried layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9913579A JPS5623739A (en) | 1979-08-04 | 1979-08-04 | Manufactue of semiconductor element having buried layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5623739A JPS5623739A (en) | 1981-03-06 |
| JPS576685B2 true JPS576685B2 (index.php) | 1982-02-06 |
Family
ID=14239278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9913579A Granted JPS5623739A (en) | 1979-08-04 | 1979-08-04 | Manufactue of semiconductor element having buried layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5623739A (index.php) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0770732B2 (ja) * | 1985-07-15 | 1995-07-31 | 東洋電機製造株式会社 | 埋め込み層を有する半導体素子基板の製造方法 |
| JPH03161248A (ja) * | 1989-11-15 | 1991-07-11 | Okuma Mach Works Ltd | Ｎｃ旋盤用刃物台の割出し制御装置 |
| KR20030007758A (ko) | 2001-03-30 | 2003-01-23 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 낮은 온도 Ｓｉ 및 ＳｉＧｅ 에피택시에서 ｎ-타입오토도핑의 억제 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3660180A (en) * | 1969-02-27 | 1972-05-02 | Ibm | Constrainment of autodoping in epitaxial deposition |
| US3847686A (en) * | 1970-05-27 | 1974-11-12 | Gen Electric | Method of forming silicon epitaxial layers |
| US3669769A (en) * | 1970-09-29 | 1972-06-13 | Ibm | Method for minimizing autodoping in epitaxial deposition |
| JPS53135571A (en) * | 1977-05-02 | 1978-11-27 | Hitachi Ltd | Vapor phase growth method for semiconductor |
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1979
- 1979-08-04 JP JP9913579A patent/JPS5623739A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5623739A (en) | 1981-03-06 |