JPS56158445A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56158445A JPS56158445A JP6297080A JP6297080A JPS56158445A JP S56158445 A JPS56158445 A JP S56158445A JP 6297080 A JP6297080 A JP 6297080A JP 6297080 A JP6297080 A JP 6297080A JP S56158445 A JPS56158445 A JP S56158445A
- Authority
- JP
- Japan
- Prior art keywords
- junction
- thick
- parts
- crystal
- insulating films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To obtain the high withstand voltage device with shallow junctions by a method wherein insulating films to cover the bulk surface between the main P-N junction and P-N junction rings for control of electric field, or the bulk surfaces between rings for control of electric field with each other, are formed deeper than the P-N junction face. CONSTITUTION:N type layers 2a, 2b are provided on a P type substrate 1, and the surface of the substrate is covered with thick insulating films 3 and a thin insulating film 4. Openings are formed selectively in the thin film 4 and electrodes 5a, 5b are formed. The layer 2b is formed in a ring shape, the blocking junction and the ring junction have together the passivated mesa structure, and the depth of junction is made as about 1mum. The surface of crystal is an uneven face, and has two kind insulating films of thick and thin. The thick film parts cover and protect the surface parts of the blocking junction and of the ring junction, and the thin film part covers and protects the other crystal face. The thick film parts are provided at the concave parts on the crystal surface to reduce the unevenness of the surface. By this constitution, high blocking withstand voltage can be obtained even with the shallow P-N junction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6297080A JPS56158445A (en) | 1980-05-13 | 1980-05-13 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6297080A JPS56158445A (en) | 1980-05-13 | 1980-05-13 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56158445A true JPS56158445A (en) | 1981-12-07 |
Family
ID=13215703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6297080A Pending JPS56158445A (en) | 1980-05-13 | 1980-05-13 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56158445A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS524433A (en) * | 1975-06-30 | 1977-01-13 | Matsushita Electric Works Ltd | Composite plating method |
-
1980
- 1980-05-13 JP JP6297080A patent/JPS56158445A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS524433A (en) * | 1975-06-30 | 1977-01-13 | Matsushita Electric Works Ltd | Composite plating method |
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