JPS56144578A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS56144578A
JPS56144578A JP4734880A JP4734880A JPS56144578A JP S56144578 A JPS56144578 A JP S56144578A JP 4734880 A JP4734880 A JP 4734880A JP 4734880 A JP4734880 A JP 4734880A JP S56144578 A JPS56144578 A JP S56144578A
Authority
JP
Japan
Prior art keywords
window
mask
formation
sbd
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4734880A
Other languages
English (en)
Japanese (ja)
Other versions
JPH025299B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Goto
Kenji Sugishima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4734880A priority Critical patent/JPS56144578A/ja
Publication of JPS56144578A publication Critical patent/JPS56144578A/ja
Publication of JPH025299B2 publication Critical patent/JPH025299B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP4734880A 1980-04-10 1980-04-10 Production of semiconductor device Granted JPS56144578A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4734880A JPS56144578A (en) 1980-04-10 1980-04-10 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4734880A JPS56144578A (en) 1980-04-10 1980-04-10 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56144578A true JPS56144578A (en) 1981-11-10
JPH025299B2 JPH025299B2 (enrdf_load_stackoverflow) 1990-02-01

Family

ID=12772638

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4734880A Granted JPS56144578A (en) 1980-04-10 1980-04-10 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56144578A (enrdf_load_stackoverflow)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5272586A (en) * 1975-12-15 1977-06-17 Fujitsu Ltd Production of semiconductor device
JPS5547349A (en) * 1978-09-28 1980-04-03 Hitachi Metals Ltd Magnetic alloy for dental surgery

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5272586A (en) * 1975-12-15 1977-06-17 Fujitsu Ltd Production of semiconductor device
JPS5547349A (en) * 1978-09-28 1980-04-03 Hitachi Metals Ltd Magnetic alloy for dental surgery

Also Published As

Publication number Publication date
JPH025299B2 (enrdf_load_stackoverflow) 1990-02-01

Similar Documents

Publication Publication Date Title
JPS56144577A (en) Production of semiconductor device
JPS57155769A (en) Manufacture of semiconductor device
JPS56144578A (en) Production of semiconductor device
JPS56144579A (en) Production of semiconductor device
JPS57155772A (en) Manufacture of semiconductor device
JPS56100443A (en) Manufacture of semiconductor device
JPS52139377A (en) Production of semiconductor device
JPS575368A (en) Manufacture of semiconductor device
JPS54121684A (en) Manufacture of semkconductor device
JPS5626443A (en) Manufacture of semiconductor device
JPS5476068A (en) Manufacture of semiconductor device
JPS5610923A (en) Preparation of semiconductor device
JPS57204134A (en) Etching method for silicon nitride film
JPS56100452A (en) Manufacture of semiconductor device
JPS535578A (en) Manufacture of semiconductor device
JPS5643744A (en) Manufacture of semiconductor device
JPS5799752A (en) Manufacture of semiconductor integrated circuit device
JPS5633826A (en) Manufacture of target
JPS5478668A (en) Manufacture of semiconductor device
JPS5491068A (en) Manufacture of semiconductor device
JPS56135945A (en) Manufacture of semiconductor device
JPS5759379A (en) Manufacture of semiconductor device
JPS56115564A (en) Manufacture of semiconductor integrated circuit device
JPS5762542A (en) Manufacture of semiconductor device
JPS5797643A (en) Manufacture of semiconductor device