JPS56142652A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56142652A
JPS56142652A JP4593680A JP4593680A JPS56142652A JP S56142652 A JPS56142652 A JP S56142652A JP 4593680 A JP4593680 A JP 4593680A JP 4593680 A JP4593680 A JP 4593680A JP S56142652 A JPS56142652 A JP S56142652A
Authority
JP
Japan
Prior art keywords
aluminum
layer
wiring layer
compound semiconductor
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4593680A
Other languages
Japanese (ja)
Inventor
Kimiaki Katsukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4593680A priority Critical patent/JPS56142652A/en
Publication of JPS56142652A publication Critical patent/JPS56142652A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To prevent the disconnection of a multilayer wiring layer in a method of forming a wiring layer on a compound semiconductor substrate by partly anodizing an aluminum layer, thereby enabling an oblique etching of aluminum. CONSTITUTION:An aluminum layer 2 is evaporated on a compound semiconductor wafer 1, a positive photoresist 3 is formed on the part becoming a wiring layer 2', and a chemically formed layer 4 is formed by anodizing the part 2'' except the part. At this time it is so controlled that the chemical reaction may not reach the compound semiconductor layer. Thereafter, formed aluminum film 4 is removed by an etchant having higher etching speed for the formed film than the aluminum, and the residual aluminum under the film 4 is etched and removed by hot phosphoric acid, thereby obtaining an aluminum wiring layer 2 having tapered sectional structure.
JP4593680A 1980-04-08 1980-04-08 Manufacture of semiconductor device Pending JPS56142652A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4593680A JPS56142652A (en) 1980-04-08 1980-04-08 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4593680A JPS56142652A (en) 1980-04-08 1980-04-08 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56142652A true JPS56142652A (en) 1981-11-07

Family

ID=12733149

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4593680A Pending JPS56142652A (en) 1980-04-08 1980-04-08 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56142652A (en)

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