JPS56140642A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56140642A JPS56140642A JP4298480A JP4298480A JPS56140642A JP S56140642 A JPS56140642 A JP S56140642A JP 4298480 A JP4298480 A JP 4298480A JP 4298480 A JP4298480 A JP 4298480A JP S56140642 A JPS56140642 A JP S56140642A
- Authority
- JP
- Japan
- Prior art keywords
- sio2
- film
- si3n4
- width
- edge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Drying Of Semiconductors (AREA)
- Element Separation (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4298480A JPS56140642A (en) | 1980-04-01 | 1980-04-01 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4298480A JPS56140642A (en) | 1980-04-01 | 1980-04-01 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56140642A true JPS56140642A (en) | 1981-11-04 |
Family
ID=12651293
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4298480A Pending JPS56140642A (en) | 1980-04-01 | 1980-04-01 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56140642A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5743438A (en) * | 1980-08-29 | 1982-03-11 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPS59130446A (ja) * | 1982-05-20 | 1984-07-27 | Yokogawa Hewlett Packard Ltd | 半導体装置の製造方法 |
-
1980
- 1980-04-01 JP JP4298480A patent/JPS56140642A/ja active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5743438A (en) * | 1980-08-29 | 1982-03-11 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPH0158661B2 (ja) * | 1980-08-29 | 1989-12-13 | Tokyo Shibaura Electric Co | |
JPS59130446A (ja) * | 1982-05-20 | 1984-07-27 | Yokogawa Hewlett Packard Ltd | 半導体装置の製造方法 |
JPH0216574B2 (ja) * | 1982-05-20 | 1990-04-17 | Yokogawa Hyuuretsuto Patsukaado Kk |
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