JPS56130948A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56130948A
JPS56130948A JP3446380A JP3446380A JPS56130948A JP S56130948 A JPS56130948 A JP S56130948A JP 3446380 A JP3446380 A JP 3446380A JP 3446380 A JP3446380 A JP 3446380A JP S56130948 A JPS56130948 A JP S56130948A
Authority
JP
Japan
Prior art keywords
gas
film
gate electrode
layer
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3446380A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6262468B2 (enrdf_load_stackoverflow
Inventor
Kohei Higuchi
Shibakazu Okabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3446380A priority Critical patent/JPS56130948A/ja
Publication of JPS56130948A publication Critical patent/JPS56130948A/ja
Publication of JPS6262468B2 publication Critical patent/JPS6262468B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum
    • H10D64/666—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum the conductor further comprising additional layers

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP3446380A 1980-03-18 1980-03-18 Semiconductor device Granted JPS56130948A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3446380A JPS56130948A (en) 1980-03-18 1980-03-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3446380A JPS56130948A (en) 1980-03-18 1980-03-18 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56130948A true JPS56130948A (en) 1981-10-14
JPS6262468B2 JPS6262468B2 (enrdf_load_stackoverflow) 1987-12-26

Family

ID=12414937

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3446380A Granted JPS56130948A (en) 1980-03-18 1980-03-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56130948A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6088476A (ja) * 1983-10-21 1985-05-18 Seiko Epson Corp 半導体装置の製造方法
JPS6154648A (ja) * 1984-08-24 1986-03-18 Mitsubishi Electric Corp 半導体装置の製造方法
JPH025477A (ja) * 1988-06-23 1990-01-10 Fujitsu Ltd 半導体装置及びその製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02260690A (ja) * 1989-03-31 1990-10-23 Matsushita Electric Ind Co Ltd プリント基板の部品取付け装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5365088A (en) * 1976-11-22 1978-06-10 Nec Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5365088A (en) * 1976-11-22 1978-06-10 Nec Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6088476A (ja) * 1983-10-21 1985-05-18 Seiko Epson Corp 半導体装置の製造方法
JPS6154648A (ja) * 1984-08-24 1986-03-18 Mitsubishi Electric Corp 半導体装置の製造方法
JPH025477A (ja) * 1988-06-23 1990-01-10 Fujitsu Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPS6262468B2 (enrdf_load_stackoverflow) 1987-12-26

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