JPS56130940A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56130940A JPS56130940A JP3364680A JP3364680A JPS56130940A JP S56130940 A JPS56130940 A JP S56130940A JP 3364680 A JP3364680 A JP 3364680A JP 3364680 A JP3364680 A JP 3364680A JP S56130940 A JPS56130940 A JP S56130940A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- forming region
- oxide
- field oxide
- high temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3364680A JPS56130940A (en) | 1980-03-17 | 1980-03-17 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3364680A JPS56130940A (en) | 1980-03-17 | 1980-03-17 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56130940A true JPS56130940A (en) | 1981-10-14 |
JPS6310898B2 JPS6310898B2 (ja) | 1988-03-10 |
Family
ID=12392201
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3364680A Granted JPS56130940A (en) | 1980-03-17 | 1980-03-17 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56130940A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58127344A (ja) * | 1982-01-26 | 1983-07-29 | Seiko Epson Corp | 半導体装置の製造方法 |
JPS58145145A (ja) * | 1982-02-22 | 1983-08-29 | Mitsubishi Electric Corp | 半導体装置の素子間分離絶縁膜の形成方法 |
JPH02119137A (ja) * | 1988-10-27 | 1990-05-07 | Nec Corp | 半導体装置の製造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5429573A (en) * | 1977-08-10 | 1979-03-05 | Hitachi Ltd | Fine machining method of semiconductor |
-
1980
- 1980-03-17 JP JP3364680A patent/JPS56130940A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5429573A (en) * | 1977-08-10 | 1979-03-05 | Hitachi Ltd | Fine machining method of semiconductor |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58127344A (ja) * | 1982-01-26 | 1983-07-29 | Seiko Epson Corp | 半導体装置の製造方法 |
JPS58145145A (ja) * | 1982-02-22 | 1983-08-29 | Mitsubishi Electric Corp | 半導体装置の素子間分離絶縁膜の形成方法 |
JPH02119137A (ja) * | 1988-10-27 | 1990-05-07 | Nec Corp | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6310898B2 (ja) | 1988-03-10 |
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