JPS56116620A - Fine pattern formation - Google Patents
Fine pattern formationInfo
- Publication number
- JPS56116620A JPS56116620A JP1908280A JP1908280A JPS56116620A JP S56116620 A JPS56116620 A JP S56116620A JP 1908280 A JP1908280 A JP 1908280A JP 1908280 A JP1908280 A JP 1908280A JP S56116620 A JPS56116620 A JP S56116620A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- eaves
- eave
- conductive films
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To obtain the second fine film patterns on only the surface of a substrate under an eave by ion etching by consisting the first film having an eave as a mask wherein the second film is evaporated. CONSTITUTION:Eaves 22 are generated by stacking positive-type 2 and negative- type 3 photoresists on a substrate 1 and by successively applying exposure and development. Next, conductive films 4 are formed as far as the surface of the substrate directly below the eaves 22 by oblique evaporation. With ion etching applied vertically and the conductive films 4 on the resist 3 and the substrate 1 removed, the conductive films 44 will be left under the eaves. The remaining width is decided by the eave width l. Minute wiring patterns 44 will be completed by removing the resists 2, 3.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1908280A JPS56116620A (en) | 1980-02-20 | 1980-02-20 | Fine pattern formation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1908280A JPS56116620A (en) | 1980-02-20 | 1980-02-20 | Fine pattern formation |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56116620A true JPS56116620A (en) | 1981-09-12 |
Family
ID=11989517
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1908280A Pending JPS56116620A (en) | 1980-02-20 | 1980-02-20 | Fine pattern formation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56116620A (en) |
-
1980
- 1980-02-20 JP JP1908280A patent/JPS56116620A/en active Pending
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