JPS56114355A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56114355A JPS56114355A JP1684980A JP1684980A JPS56114355A JP S56114355 A JPS56114355 A JP S56114355A JP 1684980 A JP1684980 A JP 1684980A JP 1684980 A JP1684980 A JP 1684980A JP S56114355 A JPS56114355 A JP S56114355A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- wiring
- sloped
- laminated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1684980A JPS56114355A (en) | 1980-02-14 | 1980-02-14 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1684980A JPS56114355A (en) | 1980-02-14 | 1980-02-14 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56114355A true JPS56114355A (en) | 1981-09-08 |
Family
ID=11927654
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1684980A Pending JPS56114355A (en) | 1980-02-14 | 1980-02-14 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56114355A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6444586B2 (en) | 1998-07-23 | 2002-09-03 | Micron Technology, Inc. | Method of etching doped silicon dioxide with selectivity to undoped silicon dioxide with a high density plasma etcher |
US6479864B1 (en) | 1997-04-30 | 2002-11-12 | Micron Technology Inc. | Semiconductor structure having a plurality of gate stacks |
US6989108B2 (en) | 2001-08-30 | 2006-01-24 | Micron Technology, Inc. | Etchant gas composition |
-
1980
- 1980-02-14 JP JP1684980A patent/JPS56114355A/ja active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6479864B1 (en) | 1997-04-30 | 2002-11-12 | Micron Technology Inc. | Semiconductor structure having a plurality of gate stacks |
US6551940B1 (en) * | 1997-04-30 | 2003-04-22 | Micron Technology, Inc. | Undoped silicon dioxide as etch mask for patterning of doped silicon dioxide |
US6849557B1 (en) * | 1997-04-30 | 2005-02-01 | Micron Technology, Inc. | Undoped silicon dioxide as etch stop for selective etch of doped silicon dioxide |
US6967408B1 (en) | 1997-04-30 | 2005-11-22 | Micron Technology, Inc. | Gate stack structure |
US6444586B2 (en) | 1998-07-23 | 2002-09-03 | Micron Technology, Inc. | Method of etching doped silicon dioxide with selectivity to undoped silicon dioxide with a high density plasma etcher |
US6989108B2 (en) | 2001-08-30 | 2006-01-24 | Micron Technology, Inc. | Etchant gas composition |
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