JPS5373086A - Formation of multilayer wiring structure - Google Patents
Formation of multilayer wiring structureInfo
- Publication number
- JPS5373086A JPS5373086A JP14909776A JP14909776A JPS5373086A JP S5373086 A JPS5373086 A JP S5373086A JP 14909776 A JP14909776 A JP 14909776A JP 14909776 A JP14909776 A JP 14909776A JP S5373086 A JPS5373086 A JP S5373086A
- Authority
- JP
- Japan
- Prior art keywords
- formation
- multilayer wiring
- wiring structure
- section
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: Impurity atoms are implanted into the wiring polycrystalline Si layer provided on a semiconductor substrate by using an ion-injecting method so that its surface impurity density will become higher than its inside, and a taper-shaped section is obtained by an etching method after heat treatment, thereby preventing the section cracking of the 2nd metal wiring layer.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14909776A JPS5373086A (en) | 1976-12-11 | 1976-12-11 | Formation of multilayer wiring structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14909776A JPS5373086A (en) | 1976-12-11 | 1976-12-11 | Formation of multilayer wiring structure |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5373086A true JPS5373086A (en) | 1978-06-29 |
Family
ID=15467620
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14909776A Pending JPS5373086A (en) | 1976-12-11 | 1976-12-11 | Formation of multilayer wiring structure |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5373086A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5561029A (en) * | 1978-10-30 | 1980-05-08 | Mitsubishi Electric Corp | Method for etching of polycrystal silicon |
US5316616A (en) * | 1988-02-09 | 1994-05-31 | Fujitsu Limited | Dry etching with hydrogen bromide or bromine |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4880440A (en) * | 1972-02-02 | 1973-10-27 | ||
JPS49118373A (en) * | 1973-03-12 | 1974-11-12 |
-
1976
- 1976-12-11 JP JP14909776A patent/JPS5373086A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4880440A (en) * | 1972-02-02 | 1973-10-27 | ||
JPS49118373A (en) * | 1973-03-12 | 1974-11-12 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5561029A (en) * | 1978-10-30 | 1980-05-08 | Mitsubishi Electric Corp | Method for etching of polycrystal silicon |
US5316616A (en) * | 1988-02-09 | 1994-05-31 | Fujitsu Limited | Dry etching with hydrogen bromide or bromine |
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