JPS56101768A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56101768A JPS56101768A JP512480A JP512480A JPS56101768A JP S56101768 A JPS56101768 A JP S56101768A JP 512480 A JP512480 A JP 512480A JP 512480 A JP512480 A JP 512480A JP S56101768 A JPS56101768 A JP S56101768A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gaalas
- gaas
- electrode
- schottky gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000001459 lithography Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Bipolar Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP512480A JPS56101768A (en) | 1980-01-18 | 1980-01-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP512480A JPS56101768A (en) | 1980-01-18 | 1980-01-18 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56101768A true JPS56101768A (en) | 1981-08-14 |
JPS622709B2 JPS622709B2 (ko) | 1987-01-21 |
Family
ID=11602560
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP512480A Granted JPS56101768A (en) | 1980-01-18 | 1980-01-18 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56101768A (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58143577A (ja) * | 1982-02-22 | 1983-08-26 | Toshiba Corp | 埋め込みゲ−ト電界効果トランジスタの製造方法 |
JPS59228718A (ja) * | 1983-06-11 | 1984-12-22 | Toshiba Corp | 半導体装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63179325U (ko) * | 1987-05-11 | 1988-11-21 | ||
JPS644729U (ko) * | 1987-06-29 | 1989-01-12 | ||
JPH01142157A (ja) * | 1987-11-26 | 1989-06-05 | Ig Tech Res Inc | 屋根構造 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4943583A (ko) * | 1972-08-30 | 1974-04-24 | ||
US4145459A (en) * | 1978-02-02 | 1979-03-20 | Rca Corporation | Method of making a short gate field effect transistor |
-
1980
- 1980-01-18 JP JP512480A patent/JPS56101768A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4943583A (ko) * | 1972-08-30 | 1974-04-24 | ||
US4145459A (en) * | 1978-02-02 | 1979-03-20 | Rca Corporation | Method of making a short gate field effect transistor |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58143577A (ja) * | 1982-02-22 | 1983-08-26 | Toshiba Corp | 埋め込みゲ−ト電界効果トランジスタの製造方法 |
JPH0358177B2 (ko) * | 1982-02-22 | 1991-09-04 | Tokyo Shibaura Electric Co | |
JPS59228718A (ja) * | 1983-06-11 | 1984-12-22 | Toshiba Corp | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS622709B2 (ko) | 1987-01-21 |
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