JPS5565466A - Mos device - Google Patents

Mos device

Info

Publication number
JPS5565466A
JPS5565466A JP13880578A JP13880578A JPS5565466A JP S5565466 A JPS5565466 A JP S5565466A JP 13880578 A JP13880578 A JP 13880578A JP 13880578 A JP13880578 A JP 13880578A JP S5565466 A JPS5565466 A JP S5565466A
Authority
JP
Japan
Prior art keywords
layer
film
normal
poly
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13880578A
Other languages
Japanese (ja)
Other versions
JPS6237820B2 (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13880578A priority Critical patent/JPS5565466A/en
Priority to US06/015,427 priority patent/US4353085A/en
Publication of JPS5565466A publication Critical patent/JPS5565466A/en
Publication of JPS6237820B2 publication Critical patent/JPS6237820B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To obtain a high-integrated MOS device through a process similar to a normal planer MOS structure as preferring a buried source structure similar basically to MOS structure provided with V-groove.
CONSTITUTION: An n+-layer 12 is formed on p-type Si substrate 11 and after injecting B-ion to form a p+-layer 13, an oxidized film 14 is formed selectively. From forming an epitaxial layer on the overall surface, there obtained are a single crystal layer 21S on the layer 13 and a poly-crystal layer 21P on the film 14. In this case, a domain 22 in the layer 13 works as a channel stopper, and a domain 23 creeps up the layer 21S to make the layer 21S work as a p-layer. Next, the epitaxial layer 21 is openend selectively to form isolating oxidized films 31, 31', and the film 31' is extended to reach the n+-layer 12. Then, gate oxidized films 32-1, 32-2, poly-Si gates 33-1, 33-2 are formed as normal, sources 41-1, 41-2 reaching the n+-layer 12 are formed according to a difference in speed of n+-diffusion, drains 42-1, 42-2 in the same depth as a normal planer type are formed, and a conductivity is given to the Si gate. According to this constitution, a source terminal can be provided only one on the substrate, thus implementing a high integration.
COPYRIGHT: (C)1980,JPO&Japio
JP13880578A 1978-02-27 1978-11-13 Mos device Granted JPS5565466A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP13880578A JPS5565466A (en) 1978-11-13 1978-11-13 Mos device
US06/015,427 US4353085A (en) 1978-02-27 1979-02-26 Integrated semiconductor device having insulated gate field effect transistors with a buried insulating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13880578A JPS5565466A (en) 1978-11-13 1978-11-13 Mos device

Publications (2)

Publication Number Publication Date
JPS5565466A true JPS5565466A (en) 1980-05-16
JPS6237820B2 JPS6237820B2 (en) 1987-08-14

Family

ID=15230640

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13880578A Granted JPS5565466A (en) 1978-02-27 1978-11-13 Mos device

Country Status (1)

Country Link
JP (1) JPS5565466A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4842688A (en) * 1971-09-27 1973-06-21
JPS4925824U (en) * 1972-06-10 1974-03-05
JPS5140783A (en) * 1974-10-03 1976-04-05 Nippon Electric Co DENKAIKO KAGATAHANDOTAISOCHI

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4842688A (en) * 1971-09-27 1973-06-21
JPS4925824U (en) * 1972-06-10 1974-03-05
JPS5140783A (en) * 1974-10-03 1976-04-05 Nippon Electric Co DENKAIKO KAGATAHANDOTAISOCHI

Also Published As

Publication number Publication date
JPS6237820B2 (en) 1987-08-14

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